利用点电击穿氧化铌纳米层形成的纳米触头的特征

Pub Date : 2024-04-25 DOI:10.1063/10.0025302
S. I. Bondarenko, A. V. Krevsun, V. P. Koverya
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引用次数: 0

摘要

我们研究了氧化物击穿前,超导铟锡合金制成的大块阴极与铌薄膜之间的氧化铌点截面,以及室温下氧化物击穿后出现的纳米触点的电气特性。在 15-60 纳米的范围内,确定了氧化物点击穿电压和纳米接触电阻与击穿方法和氧化物厚度的关系。特别是确定了击穿电流的最小值(约 1 μA),低于该值就不会发生击穿。氧化物的电压-电流特性(VCC)具有半导体特性,表明氧化物的击穿电压取决于其极性。纳米触头的 VCC 是非线性的,这与纳米触头材料在传输电流的加热下发生相变有关。
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Features of nanocontact formed using point electrical breakdown of a niobium oxide nanolayer
The electrical characteristics of a point section of niobium oxide between a massive cathode made of a superconducting indium-tin alloy and a niobium film before the oxide breakdown and the nanocontact that appears after the breakdown of the oxide at room temperature have been studied. The dependencies of the point breakdown voltage of the oxide and the resistance of nanocontacts on the method of breakdown and the thickness of the oxide in the range of 15–60 nm have been established. In particular, a minimum value of the breakdown current has been established (about 1 μA), below which breakdown does not occur. The voltage-current characteristic (VCC) of the oxide has a semiconductor character and indicates the dependence of the breakdown voltage of the oxide on its polarity. The VCC of the nanocontact is nonlinear, which is associated with phase transitions in the nanocontact material caused by its heating by the transport current.
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