欧姆触点的最佳快速热合金化对微波伪态 HEMT 的影响

IF 1.3 4区物理与天体物理 Q3 NUCLEAR SCIENCE & TECHNOLOGY

Radiation Effects and Defects in Solids Pub Date : 2024-04-24 DOI:10.1080/10420150.2024.2318709

G. Sai Saravanan, K. Muraleedharan

引用次数: 0

摘要

砷化镓（GaAs）伪非晶高电子迁移率晶体管（pHEMT）目前被用作制造微波炉用单片微波集成电路（MMIC）的有源器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effect of optimal rapid thermal alloying of ohmic contacts to microwave pseudomorphic HEMTs

Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistors (pHEMTs) are currently used as active devices in manufacturing Monolithic Microwave Integrated Circuits (MMICs) for microwav...

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来源期刊

Radiation Effects and Defects in Solids 物理-核科学技术

CiteScore

1.60

自引率

20.00%

发文量

107

审稿时长

4 months

期刊介绍： The Journal covers a wide range of topics under radiation and plasma sciences. The range of contributions encompasses: radiation physics; radiochemistry, radiobiology and physical effects of medical irradiation, including research on radiative cell degeneration; optical, electrical and mechanical effects of radiation, and their secondary effects such as diffusion and particle emission from surfaces; plasma techniques and plasma phenomena. On plasma science the Journal covers all areas of fusion, space and low temperature plasmas.