用于先进 X 射线光源的具有均匀低漏电流的超大规模阵列硅像素传感器

Peng Sun, Yupeng Lu, Gaobo Xu, Jianyu Fu, Mingzheng Ding, Zhenhua Wu, Huaxiang Yin
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引用次数: 0

摘要

开发具有高工作电压、低漏电流和大阵列的硅像素传感器(SPS)有助于提高先进 X 射线光源探测系统的能量和空间分辨率。未来探测系统包括一个混合像素探测器,总分辨率为 2048×2048 像素,每个像素的尺寸为 100 μm×100 μm。它由 16 个 pi-n SPS 组成,每个传感器的阵列尺寸为 1024×256 像素。本文对像素和保护环的设计进行了优化,以在高工作电压下实现均匀和超低的像素漏电流。通过在小规模阵列 SPS 上进行的几项测试,证明了所设计传感器的高漏电流均匀性。室温下,测试像素的漏电流范围为 0.50-0.55 pA,整个阵列的漏电流偏差小于 5%。经过优化的 256×128 像素 SPS 在室温下每个像素的均匀漏电流低于 0.6 pA,这在边缘像素和中心像素上都得到了证明。然后,根据优化设计结果制造出 1024×256 像素 SPS。结果显示,击穿电压大于 1000 V,像素的漏电流小于 2.5 pA。此外,传感器的像素间电容也达到了 16 fF 的超低水平。这项研究为在先进的 X 射线光源检测系统中需要超快、超大面板像素探测器的应用领域开发稳健的半导体器件解决方案铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultra-large scale array silicon pixel sensors with uniform and low leakage current for advanced X-ray light sources
The development of silicon pixel sensors (SPS) with high operating voltage, low leakage currents, and large arrays can contribute to improving the energy and spatial resolution of advanced X-ray light source detection systems. The Future Detection System comprises a hybrid-pixel detector with a collective resolution of 2048 × 2048 pixels, each measuring 100 μm× 100 μm. It consists of 16 p-i-n SPSs, where each sensor has an array size of 1024× 256 pixels. In this paper, the design of the pixel and guard rings is optimized to achieve uniform and ultra-low pixels leakage currents under high operating voltage. The high leakage current uniformity of the designed sensor is demonstrated through several tests conducted on small scale array SPS. The leakage current of the tested pixels is in the range of 0.50–0.55 pA at room temperature with less than 5% leakage deviation on the whole array. It is accompanied by breakdown voltages greater than 1000 V. The optimized 256× 128 pixel SPS showcases uniform leakage currents below 0.6 pA per pixel at room temperature, as evidence in both the edge and central pixels. The 1024× 256 pixels SPS is then manufactured based on the optimized design results. The obtained results show that the breakdown voltage is greater than 1000 V and the leakage current of the pixel is less than 2.5 pA. In addition, the interpixel capacitance of the sensor also reach an ultra-low level of 16 fF. This study paves the way for the development of a robust semiconductor device solution for applications where ultra-fast and large panel-pixel detectors in advanced X-ray light source detection systems are required.
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