B. Cline, D. Banks, S. Bell, I. Church, A. Davis, T. Gardiner, J. Harris, M. Hart, L. Jones, T. Nicholls, J. Nobes, S. Pradeep, M. Roberts, D. Sole, M. C. Veale, M. Wilson, V. Dhamgaye, O. Fox, K. Sawhney
{"title":"使用 HEXITECMHz 在大于 106 ph s-1 mm-2 的条件下对 Redlen HF-CdZnTe 进行表征","authors":"B. Cline, D. Banks, S. Bell, I. Church, A. Davis, T. Gardiner, J. Harris, M. Hart, L. Jones, T. Nicholls, J. Nobes, S. Pradeep, M. Roberts, D. Sole, M. C. Veale, M. Wilson, V. Dhamgaye, O. Fox, K. Sawhney","doi":"10.1088/1748-0221/19/04/p04028","DOIUrl":null,"url":null,"abstract":"\n In this paper, results are presented from the\n characterisation of Redlen Technologies high-flux-capable Cadmium\n Zinc Telluride (HF-CZT) hybridised to the HEXITECMHz \n ASIC, a novel 1 MHz continuous X-ray imaging system. A 2 mm thick\n HF-CZT HEXITECMHz detector was characterised on the B16\n Test Beamline at the Diamond Light Source and displayed an average\n FWHM of 850 eV for monochromatic X-rays of energy\n 20 keV. Measurements revealed a shift in the baseline of\n irradiated pixels that results in a movement of the entire spectrum\n to higher ADU values. Datasets taken to analyse the effect's\n dynamics showed it to be highly localised and flux-dependent, with\n the excess leakage current generated equivalent to per-pixel shifts\n of ∼ 543 pA (8.68 nA mm-2) at a flux of\n 1.26×107 ph s-1 mm-2. Comparison to results\n from a p-type Si HEXITECMHz device indicate this `excess\n leakage-current' effect is unique to HF-CZT and it is hypothesised\n that it originates from trapping at the electrode-CZT interface and\n a temporary modification of the potential barrier between the CZT\n and metal electrode.","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterisation of Redlen HF-CdZnTe at > 106 ph s-1 mm-2 using HEXITECMHz\",\"authors\":\"B. Cline, D. Banks, S. Bell, I. Church, A. Davis, T. Gardiner, J. Harris, M. Hart, L. Jones, T. Nicholls, J. Nobes, S. Pradeep, M. Roberts, D. Sole, M. C. Veale, M. Wilson, V. Dhamgaye, O. Fox, K. Sawhney\",\"doi\":\"10.1088/1748-0221/19/04/p04028\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n In this paper, results are presented from the\\n characterisation of Redlen Technologies high-flux-capable Cadmium\\n Zinc Telluride (HF-CZT) hybridised to the HEXITECMHz \\n ASIC, a novel 1 MHz continuous X-ray imaging system. A 2 mm thick\\n HF-CZT HEXITECMHz detector was characterised on the B16\\n Test Beamline at the Diamond Light Source and displayed an average\\n FWHM of 850 eV for monochromatic X-rays of energy\\n 20 keV. Measurements revealed a shift in the baseline of\\n irradiated pixels that results in a movement of the entire spectrum\\n to higher ADU values. Datasets taken to analyse the effect's\\n dynamics showed it to be highly localised and flux-dependent, with\\n the excess leakage current generated equivalent to per-pixel shifts\\n of ∼ 543 pA (8.68 nA mm-2) at a flux of\\n 1.26×107 ph s-1 mm-2. Comparison to results\\n from a p-type Si HEXITECMHz device indicate this `excess\\n leakage-current' effect is unique to HF-CZT and it is hypothesised\\n that it originates from trapping at the electrode-CZT interface and\\n a temporary modification of the potential barrier between the CZT\\n and metal electrode.\",\"PeriodicalId\":507814,\"journal\":{\"name\":\"Journal of Instrumentation\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Instrumentation\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/1748-0221/19/04/p04028\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Instrumentation","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1748-0221/19/04/p04028","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Characterisation of Redlen HF-CdZnTe at > 106 ph s-1 mm-2 using HEXITECMHz
In this paper, results are presented from the
characterisation of Redlen Technologies high-flux-capable Cadmium
Zinc Telluride (HF-CZT) hybridised to the HEXITECMHz
ASIC, a novel 1 MHz continuous X-ray imaging system. A 2 mm thick
HF-CZT HEXITECMHz detector was characterised on the B16
Test Beamline at the Diamond Light Source and displayed an average
FWHM of 850 eV for monochromatic X-rays of energy
20 keV. Measurements revealed a shift in the baseline of
irradiated pixels that results in a movement of the entire spectrum
to higher ADU values. Datasets taken to analyse the effect's
dynamics showed it to be highly localised and flux-dependent, with
the excess leakage current generated equivalent to per-pixel shifts
of ∼ 543 pA (8.68 nA mm-2) at a flux of
1.26×107 ph s-1 mm-2. Comparison to results
from a p-type Si HEXITECMHz device indicate this `excess
leakage-current' effect is unique to HF-CZT and it is hypothesised
that it originates from trapping at the electrode-CZT interface and
a temporary modification of the potential barrier between the CZT
and metal electrode.