III-V 族半导体的低温 FIB 加工可抑制表面纳米液滴

IF 3.2 3区工程技术 Q2 ENGINEERING, INDUSTRIAL

Cirp Annals-Manufacturing Technology Pub Date : 2024-01-01 DOI:10.1016/j.cirp.2024.04.022

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引用次数: 0

摘要

在离子束辐射下，III-V 族半导体表面会随机形成纳米微滴形式的表面缺陷。这项工作证明了低温 FIB 在抑制表面纳米微滴形成方面的有效性。以砷化镓为代表，研究发现表面纳米微滴来自砷化原子的相变过程。多余的镓原子会积聚起来，最终形成表面纳米微滴。80 K 的冷冻无损探伤（Cryo-FIB）可有效抑制这一相变过程，从而获得无缺陷的表面光洁度。低温 FIB 对其他 III-V 族半导体（包括 InP 和 InAs）的有效性也得到了成功验证。

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Cryo-FIB machining of group III-V semiconductors suppresses surface nanodroplets

Under ion beam radiation, surface defects in forms of nanodroplet are randomly formed on group III-V semiconductors’ surfaces. This work demonstrates the effectiveness of cryo-FIB on suppressing surface nanodroplets formation. Using GaAs as a representative, it was found that the surface nanodroplets derived from a phase transition process of the arsenide atoms. The redundant gallium atoms will then accumulate and eventually form surface nanodroplets. Cryo-FIB at 80 K can effetely suppress this phase transition process, leading to a defect free surface finish. The effectiveness of cryo-FIB on other group III–V semiconductors including InP and InAs are also successfully demonstrated.

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来源期刊

Cirp Annals-Manufacturing Technology 工程技术-工程：工业

CiteScore

7.50

自引率

9.80%

发文量

137

审稿时长

13.5 months

期刊介绍： CIRP, The International Academy for Production Engineering, was founded in 1951 to promote, by scientific research, the development of all aspects of manufacturing technology covering the optimization, control and management of processes, machines and systems. This biannual ISI cited journal contains approximately 140 refereed technical and keynote papers. Subject areas covered include: Assembly, Cutting, Design, Electro-Physical and Chemical Processes, Forming, Abrasive processes, Surfaces, Machines, Production Systems and Organizations, Precision Engineering and Metrology, Life-Cycle Engineering, Microsystems Technology (MST), Nanotechnology.