经过高达 2.5- 1015 n1 Mev eq./cm2 的辐照后碳化 LGAD 薄层的表征

R. Mulargia, R. Arcidiacono, G. Borghi, M. Boscardin, N. Cartiglia, M. Centis Vignalis, M. Costa, T. Croci, M. Ferrero, F. Ficorella, A. Fondacci, S. Giordanengo, O. Hammad Ali, C. Hanna, L. Lanteri, L. Menzio, V. Monaco, A. Morozzi, F. Moscatelli, D. Passeri, N. Pastrone, G. Paternoster, F. Siviero, R.S. White, V. Sola
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引用次数: 0

摘要

EXFLU1 是布鲁诺-凯斯勒基金会(FBK,意大利)生产的一批新型抗辐射硅传感器。它们采用了低增益雪崩二极管(LGAD)技术,实现了电荷载流子的内部倍增,以增强粒子穿过其薄薄的活性厚度(15 至 45 μ m)时产生的微小信号。这包括所谓的碳化 LGAD,即在增益层中掺入碳和硼。这项研究的重点是评估 EXFLU1 生产的带有碳化增益层的薄型传感器在 2.5- 1015 n1 Mev eq./cm2 辐照前后的性能。所进行的测试包括静态和瞬态表征,包括 I-V 和 C-V 测量,以及激光和 β 源测试。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterization of thin carbonated LGADs after irradiation up to 2.5· 1015 n1 Mev eq./cm2
EXFLU1 is a new batch of radiation-resistant silicon sensors manufactured at Fondazione Bruno Kessler (FBK, Italy). The EXFLU1 sensors utilize thin substrates that remain operable even after extensive irradiation. They incorporate Low-Gain Avalanche Diode (LGAD) technology, enabling internal multiplication of charge carriers to boost the small signal produced by a particle crossing their thin active thicknesses, ranging from 15 to 45 μ m. To address current challenges related to acceptor removal, the EXFLU1 production incorporates improved defect engineering techniques. This includes the so called carbonated LGADs, where carbon doping is implanted alongside boron in the gain layer. This contribution focuses on evaluating the performances of thin sensors with carbonated gain layer from the EXFLU1 production, before and after irradiation up to 2.5· 1015 n1 Mev eq./cm2. The conducted tests involve static and transient characterizations, including I-V and C-V measurements, as well as laser and β-source tests. This work aims to present the state of the art in LGAD sensor technology with a carbonated gain layer and shows the characterization of the most radiation-resistant LGAD sensors produced to date.
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