伽马辐照下 N 沟道 MOSFET 的动态性能评估

Abdelhameed Sharaf
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引用次数: 0

摘要

本手稿对两组 N 沟道 MOSFET(2N7000 和 BS107)进行了实验研究。每组都有两个相同类型的器件,它们都暴露在一定剂量的伽马射线电离辐射下。这项研究的主要目的是讨论这些类型在低剂量电离辐射下的动态性能,以便用作低剂量辐射剂量计。本研究的新颖之处在于对阈值电压、上升和下降时间、不同器件终端之间的跨导和电容等动态参数进行了研究。由于伽马射线的辐照,MOSFET 区域产生了表面和界面电荷。阈值电压取决于 MOSFET 参数,因为它与氧化物电容成反比。从得到的结果来看,沟道宽度和长度对决定所有动态参数起着重要作用。我们可以注意到,大多数电容值都在减小。因此,阈值电压随着辐射剂量的增加而降低。从结果来看,不同的跨导值在这些相邻区域会随着沟道宽度和长度的不同而有不同的变化。一般来说,随着伽马射线辐照剂量的增加,电感值呈下降趋势。随着剂量值的增加,上升时间趋于缩短,而下降时间则趋于半线性增加。从数字处理的角度来看,上升或下降时间的微小变化都会影响脉冲决策,进而影响信息处理。最后,我们可以得出结论,所研究的 n 沟道 MOSFET 不仅对伽马射线辐射有特定的响应,而且在本研究的剂量范围内具有确定的性能。因此,所研究的 n 沟道 MOSFET 在类型数和剂量方面都可以作为伽马射线辐射的低剂量剂量计。所获得的动态响应对于最近的空间或电离辐射环境和应用都非常重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Dynamic Performance Evaluation of N-channel MOSFET under Gamma Irradiation
In this manuscript, the experimental studies for two groups, 2N7000 and BS107, of N-channel MOSFET are conducted. Each group, which have two devices from the same type, is exposed to dosages of gamma-ray ionizing radiation. The main objective of this study is to discuss the dynamic performance of these types under low dose ionizing radiation for purpose of usage as a low dose radiation dosimeter. Novelty of this study arisen from that the dynamic parameters such as threshold voltage, rise and fall times, the transconductance and capacitance between different device terminals are investigated. Because of gamma-ray irradiation, the surface and interface charges are arisen into MOSFET region. The threshold voltage is dependent on the MOSFET parameters, as it depends reversely on the oxide capacitance. From the obtained results, the channel width and length play an important role for determining all the dynamic parameters. One can notice that the majority of capacitances values are decreased. Consequently, the threshold voltage is decreased with the increase of radiation dose. From outcomes, the different transconductance values have different comportment according to the channel width and length into these adjacent regions. Generally, it tends to degrade with increasing the gamma-ray irradiation dose. The rise time tends to decrease while fall time tends to increase semi-linearly with increasing dosage values. From digital processing point of view, small shift in the rise or fall time will affect the pulse decision and then the information processing. Finally, one can conclude that n-channel MOSFETs under study not only have a specified response to gamma-ray radiation but also, they give a deterministic performance over the range of dose in this study. Therefore, the n-channel MOSFET under study - for both type number and dose-is a candidate to be a low dose dosimeter for gamma-ray radiation. The obtained dynamic response will be very important for any recent space or ionizing radiation environment and applications
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