二维晶体场异质结构中的电荷临界现象

Solids Pub Date : 2024-04-06 DOI:10.3390/solids5020013
A. Danilyuk, D. Podryabinkin, Victor L. Shaposhnikov, S. Prischepa
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引用次数: 0

摘要

研究了金属(M)/绝缘体(I)/二维晶体异质结构中的电荷特性和电物理参数相互影响的规律性。其中一种情况是将过渡金属二卤化物(TMD)MoS2 视为二维晶体,另一种情况是选择韦尔半金属(WSM)ZrTe5 作为准二维晶体的代表。通过自洽地求解所考虑的异质结构的静电方程和费米-狄拉克分布,得出了电荷载流子浓度、化学势和 TMD(WSM)量子电容等参数之间的关系,以及 I 层电容和 I-TMD (WSM)界面电容之间的关系,以及它们对场电极电势的依赖关系。此外,还确定了电荷不稳定性出现的条件及其引起的临界现象。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Charge Critical Phenomena in a Field Heterostructure with Two-Dimensional Crystal
The charge properties and regularities of mutual influence of the electro-physical parameters in a metal (M)/insulator (I)/two-dimensional crystal heterostructure were studied. In one case, the transition metal dichalcogenide (TMD) MoS2 was considered as a two-dimensional crystal, and in another the Weyl semi-metal (WSM) ZrTe5, representative of a quasi-two-dimensional crystal was chosen for this purpose. By self-consistently solving the electrostatic equations of the heterostructures under consideration and the Fermi–Dirac distribution, the relationship between such parameters as the concentration of charge carriers, chemical potential, and quantum capacitance of the TMD (WSM), as well as the capacitance of the I layer and the interface capacitance I–TMD (WSM), and their dependence on the field electrode potential, have been derived. The conditions for the emergence of charge instability and the critical phenomena caused by it are also determined.
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CiteScore
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