通过溅射外延技术生长的带有有源 GePb 层的 Pi-n 光电探测器

Applied Physics Express Pub Date : 2024-04-11 DOI:10.35848/1882-0786/ad3dc1

Jiulong Yu, Guangyang Lin, Shilong Xia, Wei Huang, Tianwei Yang, J. Jiao, Xiangquan Liu, Songyan Chen, Cheng Li, Jun Zheng, Jun Li

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引用次数: 0

摘要

本文采用磁控溅射技术，以较高的基底温度和较快的沉积速率获得了单晶 GePb 薄膜。GePb 薄膜结晶度高，表面光滑。铅含量达到 1.29%，且未观察到偏析现象。在此基础上，成功制备了基于 GePb 的 pi-n 光电探测器。该器件在 -1.0 V 时的室温暗电流密度为 5.83 mA/cm2，截止波长为 1990 nm，覆盖了所有通信窗口。在波长为 1625 nm 时，光电探测器的响应率在 -1.0 V 时达到 0.132 A/W。该器件展示了在光通信领域的应用潜力。

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P-i-n photodetector with active GePb layer grown by sputtering epitaxy

In this paper, single-crystal GePb films were obtained by magnetron sputtering with high substrate temperature and rapid deposition rate. The GePb films have high crystalline qualities and smooth surfaces. The Pb content reached 1.29% and no segregation was observed. Based on this, a GePb-based p-i-n photodetector was successfully prepared. The device showed a room-temperature dark current density of 5.83 mA/cm2 at -1.0 V and a cutoff wavelength of 1990 nm, which covers all communication windows. At the wavelength of 1625 nm, responsivity of the photodetector reached 0.132 A/W at -1.0 V. The device demonstrates potential application in optical communications.

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Applied Physics Express

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