设计、制造和编程低成本脉冲高压直流电源,用于电泳沉积碳化硅与石墨和/或氧化铝的热电应用

Juan Jesús Reyes Valdez, Edna Carina De la Cruz Terrazas, Eugenio Rodríguez González
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摘要

本文介绍了一种低成本脉冲高压直流(HVDC)电源的专有设计、制造、编程和测试,其输出电压为 430 V,功率为 25 W。为了演示脉冲电源原型的运行,使用电泳沉积(EPD)方法制作了碳化硅(SiC)和碳化硅与石墨(C)和/或氧化铝(Al2O3)混合的涂层。加工完成后,样品在 500 °C 下进行热处理,以评估其热电(TE)效率。样品通过 X 射线衍射 (XRD)、扫描电子显微镜 (SEM)、拉曼光谱、塞贝克系数、电导率和热导率进行了分析。塞贝克系数、电导率和热导率是在氮气(N2)环境中于 100-500 °C 的温度范围内测量的。在 500 ℃ 时,SiC 6C-4Al 样品的电导率为 0.65 S/cm,而在 200 ℃ 时,SiC 6C-4Al 样品的最大塞贝克系数为 2500 μV/K。SiC 6C-4Al 的热导率范围为 0.35-0.37 W/m-K,在相同的测量温度范围内远低于不含氧化铝和石墨的 SiC 样品。总之,SiC 6C-4Al 样品的性能指标最高,ZT ≈ 0.01。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design, Construction and Programming of a Low-Cost Pulsed High-Voltage Direct Current Power Supply for the Electrophoretic Deposition of Silicon Carbide Mixed with Graphite and/or Alumina for Thermoelectric Applications
This document describes a proprietary design, construction, programming and testing of a low-cost pulsed high-voltage direct current (HVDC) power supply with an output of 430 V and power of 25 W. The design obtained allows costs to be reduced compared to commercial ones, highlighting that the manufacturing of this HVDC is easy to replicate. To demonstrate the operation of the pulsed power supply prototype, coatings of silicon carbide (SiC) and SiC mixed with graphite (C) and/or alumina (Al2O3) were made using the electrophoretic deposition (EPD) method. After processing, samples underwent a heat treatment at 500 °C to evaluate their thermoelectric (TE) efficiency. The samples were analysed via X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy, Seebeck coefficient, electrical conductivity and thermal conductivity. The Seebeck coefficient, electrical conductivity and thermal conductivity were measured in a temperature range of 100–500 °C in a nitrogen (N2) atmosphere. The electrical conductivity of the SiC 6C-4Al sample was 0.65 S/cm at 500 °C, while the maximum Seebeck coefficient was 2500 μV/K of the SiC 6C-4Al sample at 200 °C. The thermal conductivity of SiC 6C-4Al was in the range of 0.35–0.37 W/m·K, which was much lower than the SiC sample free of alumina and graphite in the same measured temperature range. In conclusion, the SiC 6C-4Al sample presented the highest figure of merit with a ZT ≈ 0.01.
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