M. Dub, P. Sai, A. Krajewska, D. B. But, Yu. Ivonyak, P. Prystawko, J. Kacperski, G. Cywiński, S. Rumyantsev, W. Knap, M. Słowikowski, M. Filipiak
{"title":"用于太赫兹波操纵的栅栅氮化铝/氮化镓质子晶体","authors":"M. Dub, P. Sai, A. Krajewska, D. B. But, Yu. Ivonyak, P. Prystawko, J. Kacperski, G. Cywiński, S. Rumyantsev, W. Knap, M. Słowikowski, M. Filipiak","doi":"10.1142/s0129156424400202","DOIUrl":null,"url":null,"abstract":"The grating-gate plasmonic crystal system represents a compelling arena for investigating strong light-matter interactions and diverse plasmon resonances. This study reviews the recent discovery of two distinctive terahertz phases of AlGaN/GaN plasmonic crystals that arise from varying the modulation of a two-dimensional electron density beneath the metallic gratings: the delocalized phase at weak modulation and the localized phase at strong modulation. Notably, we delve into an impact of the grating filling factor on the electrically driven transition between these phases. Our findings underscore the critical role of specific metal grating geometry parameters in facilitating this transition. Moreover, we explore the potential of utilizing graphene-based gratings as alternatives to metallic gratings. Through the integration of graphene, grown by Chemical Vapor Deposition method on copper foil and then transferred to the high electron mobility AlGaN/GaN heterostructures, we achieve an effective modulation of broadband absorption by free charge carriers within the 0.5–6 THz range via electrical biasing of the graphene electrode. However, while this approach successfully modulates absorption in a wide THz range, it does not elicit plasmon resonances within the graphene-based grating-gate plasmonic crystals. This intriguing observation poses a significant unresolved question warranting further theoretical and experimental exploration in subsequent studies.","PeriodicalId":35778,"journal":{"name":"International Journal of High Speed Electronics and Systems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Grating-Gate AlGaN/GaN Plasmonic Crystals for Terahertz Waves Manipulation\",\"authors\":\"M. Dub, P. Sai, A. Krajewska, D. B. But, Yu. Ivonyak, P. Prystawko, J. Kacperski, G. Cywiński, S. Rumyantsev, W. Knap, M. Słowikowski, M. Filipiak\",\"doi\":\"10.1142/s0129156424400202\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The grating-gate plasmonic crystal system represents a compelling arena for investigating strong light-matter interactions and diverse plasmon resonances. This study reviews the recent discovery of two distinctive terahertz phases of AlGaN/GaN plasmonic crystals that arise from varying the modulation of a two-dimensional electron density beneath the metallic gratings: the delocalized phase at weak modulation and the localized phase at strong modulation. Notably, we delve into an impact of the grating filling factor on the electrically driven transition between these phases. Our findings underscore the critical role of specific metal grating geometry parameters in facilitating this transition. Moreover, we explore the potential of utilizing graphene-based gratings as alternatives to metallic gratings. Through the integration of graphene, grown by Chemical Vapor Deposition method on copper foil and then transferred to the high electron mobility AlGaN/GaN heterostructures, we achieve an effective modulation of broadband absorption by free charge carriers within the 0.5–6 THz range via electrical biasing of the graphene electrode. However, while this approach successfully modulates absorption in a wide THz range, it does not elicit plasmon resonances within the graphene-based grating-gate plasmonic crystals. This intriguing observation poses a significant unresolved question warranting further theoretical and experimental exploration in subsequent studies.\",\"PeriodicalId\":35778,\"journal\":{\"name\":\"International Journal of High Speed Electronics and Systems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-04-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of High Speed Electronics and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1142/s0129156424400202\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of High Speed Electronics and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/s0129156424400202","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
Grating-Gate AlGaN/GaN Plasmonic Crystals for Terahertz Waves Manipulation
The grating-gate plasmonic crystal system represents a compelling arena for investigating strong light-matter interactions and diverse plasmon resonances. This study reviews the recent discovery of two distinctive terahertz phases of AlGaN/GaN plasmonic crystals that arise from varying the modulation of a two-dimensional electron density beneath the metallic gratings: the delocalized phase at weak modulation and the localized phase at strong modulation. Notably, we delve into an impact of the grating filling factor on the electrically driven transition between these phases. Our findings underscore the critical role of specific metal grating geometry parameters in facilitating this transition. Moreover, we explore the potential of utilizing graphene-based gratings as alternatives to metallic gratings. Through the integration of graphene, grown by Chemical Vapor Deposition method on copper foil and then transferred to the high electron mobility AlGaN/GaN heterostructures, we achieve an effective modulation of broadband absorption by free charge carriers within the 0.5–6 THz range via electrical biasing of the graphene electrode. However, while this approach successfully modulates absorption in a wide THz range, it does not elicit plasmon resonances within the graphene-based grating-gate plasmonic crystals. This intriguing observation poses a significant unresolved question warranting further theoretical and experimental exploration in subsequent studies.
期刊介绍:
Launched in 1990, the International Journal of High Speed Electronics and Systems (IJHSES) has served graduate students and those in R&D, managerial and marketing positions by giving state-of-the-art data, and the latest research trends. Its main charter is to promote engineering education by advancing interdisciplinary science between electronics and systems and to explore high speed technology in photonics and electronics. IJHSES, a quarterly journal, continues to feature a broad coverage of topics relating to high speed or high performance devices, circuits and systems.