Zon, Tzu-Wei Lo, Zhen-Lun Li, Samatcha Vorathamrong, Chao-Chia Cheng, Chun-Nien Liu, Chun-Te Chiang, Li-Wei Hung, Ming-Sen Hsu, Wei-Sheng Liu, Jen-Inn Chyi, Charles W. Tu
{"title":"通过改变生长在砷化镓（001）衬底上的 InGaAs/GaAsSb \"W \"量子阱中的锑成分来调节发射波长","authors":"Zon, Tzu-Wei Lo, Zhen-Lun Li, Samatcha Vorathamrong, Chao-Chia Cheng, Chun-Nien Liu, Chun-Te Chiang, Li-Wei Hung, Ming-Sen Hsu, Wei-Sheng Liu, Jen-Inn Chyi, Charles W. Tu","doi":"10.1116/6.0003501","DOIUrl":null,"url":null,"abstract":"InGaAs/GaAsSb “W” quantum wells with GaAsP barriers are grown on GaAs (001) substrates by molecular beam epitaxy. We investigate the effect of the Sb composition in GaAsSb on the photoluminescence (PL) wavelength. X-ray rocking curve (XRC) measurements and simulations are performed to investigate the material composition and layer thickness. Low-temperature PL spectra are consistent with the XRC results. At the lowest Sb composition of 6%, the PL intensity is the strongest, and room-temperature PL is realized at ∼1100 nm. By increasing the Sb composition in the GaAsSb layer, low-temperature (20 K) PL emits at longer wavelength up to ∼1400 nm at 21% Sb while the PL intensity is the weakest. The XRC is also degraded. The strained bandgap simulation reveals the type-I to type-II band alignment transition as the Sb composition is ≥9%.","PeriodicalId":170900,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":" 21","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Tuning the emission wavelength by varying the Sb composition in InGaAs/GaAsSb “W” quantum wells grown on GaAs (001) substrates\",\"authors\":\"Zon, Tzu-Wei Lo, Zhen-Lun Li, Samatcha Vorathamrong, Chao-Chia Cheng, Chun-Nien Liu, Chun-Te Chiang, Li-Wei Hung, Ming-Sen Hsu, Wei-Sheng Liu, Jen-Inn Chyi, Charles W. Tu\",\"doi\":\"10.1116/6.0003501\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InGaAs/GaAsSb “W” quantum wells with GaAsP barriers are grown on GaAs (001) substrates by molecular beam epitaxy. We investigate the effect of the Sb composition in GaAsSb on the photoluminescence (PL) wavelength. X-ray rocking curve (XRC) measurements and simulations are performed to investigate the material composition and layer thickness. Low-temperature PL spectra are consistent with the XRC results. At the lowest Sb composition of 6%, the PL intensity is the strongest, and room-temperature PL is realized at ∼1100 nm. By increasing the Sb composition in the GaAsSb layer, low-temperature (20 K) PL emits at longer wavelength up to ∼1400 nm at 21% Sb while the PL intensity is the weakest. The XRC is also degraded. The strained bandgap simulation reveals the type-I to type-II band alignment transition as the Sb composition is ≥9%.\",\"PeriodicalId\":170900,\"journal\":{\"name\":\"Journal of Vacuum Science & Technology A\",\"volume\":\" 21\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Vacuum Science & Technology A\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1116/6.0003501\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology A","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1116/6.0003501","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Tuning the emission wavelength by varying the Sb composition in InGaAs/GaAsSb “W” quantum wells grown on GaAs (001) substrates
InGaAs/GaAsSb “W” quantum wells with GaAsP barriers are grown on GaAs (001) substrates by molecular beam epitaxy. We investigate the effect of the Sb composition in GaAsSb on the photoluminescence (PL) wavelength. X-ray rocking curve (XRC) measurements and simulations are performed to investigate the material composition and layer thickness. Low-temperature PL spectra are consistent with the XRC results. At the lowest Sb composition of 6%, the PL intensity is the strongest, and room-temperature PL is realized at ∼1100 nm. By increasing the Sb composition in the GaAsSb layer, low-temperature (20 K) PL emits at longer wavelength up to ∼1400 nm at 21% Sb while the PL intensity is the weakest. The XRC is also degraded. The strained bandgap simulation reveals the type-I to type-II band alignment transition as the Sb composition is ≥9%.
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