Taguchi 法、方差分析和 TOPSIS 技术在优化 Al-SiC MMC 电化学加工表面粗糙度和材料去除率工艺参数中的应用

Chandan Waghmare, Santosh Patil, Pruthviraj Chaudhari
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引用次数: 0

摘要

目的评估 EDM、ECM 和 USM 等先进加工技术在提高生产率和克服与过时的 Al-SiC MMC 加工相关的挑战方面的重要性。评估 Al-SiC MMC 先进加工方法对表面粗糙度、刀具磨损和加工成本的影响。方法 研究 Al/15%SiC 复合材料电化学加工 (ECM) 的电压 (V)、进给速度 (F) 和电解液浓度 (C)。为了优化工艺参数,采用了 L27 正交阵列的田口试验设计 (DOE) 方法。采用田口方法对信号响应性进行了优化。采用与理想解相似的顺序偏好技术(TOPSIS)找到最佳加工设置。研究结果研究结果表明,影响表面粗糙度和材料去除率的参数是电压、电解液浓度和进给量。选择最佳组合水平 A2、B3、C3(越小越好),即电压 20 V,进给速度 (f) 0.4 mm/min,电解液浓度 (c) 30 g/lit,可获得最小表面粗糙度。最佳组合水平为 A3、B3、C3(越大越好),即电压 25V,进料速度 (f) 0.4 mm/min,电解液浓度 (c) 30 g/lit。新颖性: 在这项工作中,TOPSIS 技术与田口方法结合使用,这是其他研究人员很少研究的。与其他技术相比,TOPSIS 技术提供了最佳的解决方案。关键词Al-SiC MMC、ECM、MRR、Ra、田口方法、TOPSIS
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Application of Taguchi Method, ANOVA Analysis, and TOPSIS Technique in Optimization of Process Parameters for Surface Roughness and Material Removal Rate in Electrochemical Machining of Al-SiC MMCs
Objectives: To evaluate the significance of advanced machining techniques, such as EDM, ECM, and USM, in increasing productivity and overcoming challenges associated with outdated Al-SiC MMC machining. To assess the surface roughness, tool wear, and machining cost implications of employing advanced machining methods for Al-SiC MMCs. Methods The parameters studied were voltage (V), feed rate (F), and electrolyte concentration (C) in electrochemical machining (ECM) of Al/15%SiC composites. To optimise process parameters, the Taguchi method for Design of Experiments (DOE) with an L27 orthogonal array was used. Signal responsiveness is optimised using the Taguchi approach. The Technique for Order Preference by Similarity to the Ideal Solution (TOPSIS) is used to find optimal machining settings. Findings: The outcome of this research is that the parameters affecting surface roughness and material removal rate are voltage, electrolyte concentration and feed rate. The minimum Surface Roughness achieved by selecting the best combination level is A2, B3, C3 (smaller is better) i.e., voltage 20 V, feed rate (f) 0.4 mm/min., electrolyte concentration (c) 30 g/lit. The maximum Material Removal Rate achieved by selecting the best combination level is A3, B3, C3 (larger-is-better) i.e., voltage 25V, feed rate (f) 0.4 mm/min., electrolyte concentration (c) 30 g/lit. Novelty : In this work, TOPSIS technique paired with Taguchi method is used which is rarely studied by other researchers. TOPSIS technique provides the best optimal solution as compared to other techniques. Keywords: Al-SiC MMCs, ECM, MRR, Ra, Taguchi method, TOPSIS
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