用于可穿戴神经形态计算系统的丝状有机忆阻器

Chang-Jae Beak, Jihwan Lee, Junseok Kim, Jiwoo Park, Sin-Hyung Lee
{"title":"用于可穿戴神经形态计算系统的丝状有机忆阻器","authors":"Chang-Jae Beak, Jihwan Lee, Junseok Kim, Jiwoo Park, Sin-Hyung Lee","doi":"10.1088/2634-4386/ad409a","DOIUrl":null,"url":null,"abstract":"\n A filamentary-based organic memristor is a promising synaptic component for the development of neuromorphic systems for wearable electronics. In the organic memristors, metallic conductive filaments (CF) are formed via electrochemical metallization under electric stimuli, and it results in the resistive switching characteristics. To realize the bio-inspired computing systems utilizing the organic memristors, it is essential to effectively engineer the CF growth for emulating the complete synaptic functions in the device. Here, the fundamental principles underlying the operation of organic memristors and parameters related to CF growth are discussed. Additionally, recent studies that focused on controlling CF growth to replicate synaptic functions, including reproducible resistive switching, continuous conductance levels, and synaptic plasticity, are reviewed. Finally, upcoming research directions in the field of organic memristors for wearable smart computing systems are suggested.","PeriodicalId":198030,"journal":{"name":"Neuromorphic Computing and Engineering","volume":" 689","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Filamentary-based organic memristors for wearable neuromorphic computing systems\",\"authors\":\"Chang-Jae Beak, Jihwan Lee, Junseok Kim, Jiwoo Park, Sin-Hyung Lee\",\"doi\":\"10.1088/2634-4386/ad409a\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n A filamentary-based organic memristor is a promising synaptic component for the development of neuromorphic systems for wearable electronics. In the organic memristors, metallic conductive filaments (CF) are formed via electrochemical metallization under electric stimuli, and it results in the resistive switching characteristics. To realize the bio-inspired computing systems utilizing the organic memristors, it is essential to effectively engineer the CF growth for emulating the complete synaptic functions in the device. Here, the fundamental principles underlying the operation of organic memristors and parameters related to CF growth are discussed. Additionally, recent studies that focused on controlling CF growth to replicate synaptic functions, including reproducible resistive switching, continuous conductance levels, and synaptic plasticity, are reviewed. Finally, upcoming research directions in the field of organic memristors for wearable smart computing systems are suggested.\",\"PeriodicalId\":198030,\"journal\":{\"name\":\"Neuromorphic Computing and Engineering\",\"volume\":\" 689\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Neuromorphic Computing and Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/2634-4386/ad409a\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Neuromorphic Computing and Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/2634-4386/ad409a","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

基于灯丝的有机忆阻器是一种很有前途的突触元件,可用于开发可穿戴电子设备的神经形态系统。在有机忆阻器中,金属导电丝(CF)是在电刺激下通过电化学金属化形成的,因此具有电阻开关特性。要利用有机忆阻器实现生物启发计算系统,就必须有效地设计金属导电丝的生长,以便在器件中模拟完整的突触功能。本文讨论了有机忆阻器工作的基本原理以及与CF生长相关的参数。此外,还综述了近期有关控制 CF 生长以复制突触功能的研究,包括可重现的电阻开关、连续电导水平和突触可塑性。最后,还提出了可穿戴智能计算系统有机忆阻器领域的未来研究方向。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Filamentary-based organic memristors for wearable neuromorphic computing systems
A filamentary-based organic memristor is a promising synaptic component for the development of neuromorphic systems for wearable electronics. In the organic memristors, metallic conductive filaments (CF) are formed via electrochemical metallization under electric stimuli, and it results in the resistive switching characteristics. To realize the bio-inspired computing systems utilizing the organic memristors, it is essential to effectively engineer the CF growth for emulating the complete synaptic functions in the device. Here, the fundamental principles underlying the operation of organic memristors and parameters related to CF growth are discussed. Additionally, recent studies that focused on controlling CF growth to replicate synaptic functions, including reproducible resistive switching, continuous conductance levels, and synaptic plasticity, are reviewed. Finally, upcoming research directions in the field of organic memristors for wearable smart computing systems are suggested.
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CiteScore
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