氧气含量对 He/CF4 APPJ 电学和光学特性影响的实验研究

Lijun Wang, Huan Zhao, Jie Liu, Wei Li
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摘要

CF4 是活性含氟物种(RFS)的重要来源,因此常被用来与惰性气体混合,作为常压等离子体射流(APPJ)的工作气体,用于材料表面氟化改性。加入少量 O2 可以增加 He/CF4 APPJ 中 RFS 的密度。因此,本文对 He/CF4/O2 APPJ 与电介质相互作用的流体力学、电学和光学特性进行了实验研究。同时,本文还详细讨论了激励源对等离子体放电的影响,并根据前文建立的模型,利用模拟结果分析了实验现象的内部机理。研究发现,由于 O2 的电离能较低,且增加了逸散 He 与 O2 之间的彭宁电离,因此加入少量 O2 可以增加 He/CF4 APPJ 的强度并加快其轴向传播速度。随着 O2 含量的增加,由于 O2 的电子附着反应,放电的稳定性逐渐增强,并且由于 O2 含量的增加提高了介质势垒放电(DBD)区的击穿阈值,每个半电压周期的初级电流脉冲位置逐渐接近峰值电压位置。在下游介质存在的情况下,由于电子附着率和电子碰撞激发损耗功率较高,添加 0.1%O2 并不会显著改变 APPJ 的径向发展半径。与没有电介质时相比,放电脉冲强度普遍降低,严格意义上的辉光放电不复存在。RFS 的连续光谱强度会随着少量氧气的加入而增加,而当氧气含量过高时则会明显降低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Experimental study of the influence of O2 content on electrical and optical characteristics of He/CF4 APPJ
CF4 is an important source of reactive F-containing species (RFS) so that it is used to mix with inert gas as the working gas of atmospheric pressure plasma jet (APPJ) for material surface fluoridation modification. The addition of a small amount of O2 can increase the density of RFS in He/CF4 APPJ. Therefore, the hydrodynamic, electrical and optical properties of He/CF4/O2 APPJ interacting with the dielectric are experimentally investigated in this paper. Meanwhile, the influence of the excitation source on plasma discharge is discussed in detail and the internal mechanism of the experimental phenomenon in this paper is analyzed using the simulation results based on the model established in the previous paper. It is found that the addition of a small amount of O2 can increase the intensity and accelerate the axial propagation speed of He/CF4 APPJ due to the low ionization energy of O2 and the increase of the Penning ionization between metastable He and O2. With the increase of O2 content, the stability of the discharge is gradually enhanced due to the electron attachment reaction of O2 and the position of the primary current pulse in each half voltage cycle gradually approaches the position of the peak voltage because the increase in O2 content raises the breakdown threshold in dielectric barrier discharge (DBD) region. In the presence of downstream dielectric, the addition of 0.1%O2 does not significantly change the radial development radius of APPJ due to the higher electron attachment rate and electron collision excitation loss power. The discharge pulse intensity is generally reduced compared to the absence of dielectric and the glow discharge in the strict sense no longer exists. The continuous spectrum intensity of RFS increases with the addition of a small amount of O2 while decreases significantly when O2 content is too high.
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