{"title":"β-氧化镓材料和器件技术","authors":"Masataka Higashiwaki, Man Hoi Wong","doi":"10.1146/annurev-matsci-080921-104058","DOIUrl":null,"url":null,"abstract":"Beta-gallium oxide (β-Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>) is a material with a history of research and development spanning about 70 years; however, it has attracted little attention as a semiconductor for a long time. The situation has changed completely in the last ten years, and the world has seen increasing demand for active research and development of both materials and devices. Many of its distinctive physical properties are attributed to its very large bandgap energy of 4.5 eV. Another important feature is that it is possible to grow large bulk single crystals by melt growth. In this article, we first discuss the physical properties of β-Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>, which are mainly important for electronic device applications, bulk melt growth, and thin-film epitaxial growth technologies. Then, state-of-the-art β-Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> transistor and diode technologies are discussed.","PeriodicalId":8055,"journal":{"name":"Annual Review of Materials Research","volume":null,"pages":null},"PeriodicalIF":10.6000,"publicationDate":"2024-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Beta-Gallium Oxide Material and Device Technologies\",\"authors\":\"Masataka Higashiwaki, Man Hoi Wong\",\"doi\":\"10.1146/annurev-matsci-080921-104058\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Beta-gallium oxide (β-Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>) is a material with a history of research and development spanning about 70 years; however, it has attracted little attention as a semiconductor for a long time. The situation has changed completely in the last ten years, and the world has seen increasing demand for active research and development of both materials and devices. Many of its distinctive physical properties are attributed to its very large bandgap energy of 4.5 eV. Another important feature is that it is possible to grow large bulk single crystals by melt growth. In this article, we first discuss the physical properties of β-Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>, which are mainly important for electronic device applications, bulk melt growth, and thin-film epitaxial growth technologies. Then, state-of-the-art β-Ga<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> transistor and diode technologies are discussed.\",\"PeriodicalId\":8055,\"journal\":{\"name\":\"Annual Review of Materials Research\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":10.6000,\"publicationDate\":\"2024-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Annual Review of Materials Research\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1146/annurev-matsci-080921-104058\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Annual Review of Materials Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1146/annurev-matsci-080921-104058","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
β-氧化镓(β-Ga2O3)是一种具有约 70 年研究和开发历史的材料;然而,长期以来,它作为一种半导体却很少受到关注。近十年来,情况发生了翻天覆地的变化,全球对材料和器件的积极研发需求与日俱增。它的许多独特物理性质都归功于其 4.5 eV 的超大带隙能。它的另一个重要特点是可以通过熔融生长的方法培育出大块单晶体。在本文中,我们首先讨论了β-Ga2O3 的物理特性,这些特性对电子器件应用、块体熔融生长和薄膜外延生长技术非常重要。然后,讨论了最先进的 β-Ga2O3 晶体管和二极管技术。
Beta-Gallium Oxide Material and Device Technologies
Beta-gallium oxide (β-Ga2O3) is a material with a history of research and development spanning about 70 years; however, it has attracted little attention as a semiconductor for a long time. The situation has changed completely in the last ten years, and the world has seen increasing demand for active research and development of both materials and devices. Many of its distinctive physical properties are attributed to its very large bandgap energy of 4.5 eV. Another important feature is that it is possible to grow large bulk single crystals by melt growth. In this article, we first discuss the physical properties of β-Ga2O3, which are mainly important for electronic device applications, bulk melt growth, and thin-film epitaxial growth technologies. Then, state-of-the-art β-Ga2O3 transistor and diode technologies are discussed.
期刊介绍:
The Annual Review of Materials Research, published since 1971, is a journal that covers significant developments in the field of materials research. It includes original methodologies, materials phenomena, material systems, and special keynote topics. The current volume of the journal has been converted from gated to open access through Annual Reviews' Subscribe to Open program, with all articles published under a CC BY license. The journal defines its scope as encompassing significant developments in materials science, including methodologies for studying materials and materials phenomena. It is indexed and abstracted in various databases, such as Scopus, Science Citation Index Expanded, Civil Engineering Abstracts, INSPEC, and Academic Search, among others.