具有不同修整参数的激光修整 V 型砷化镓/砷化镓锑/砷化镓量子阱的线性和非线性光学特性:理论建模

IF 1.1 4区 物理与天体物理 Q4 NANOSCIENCE & NANOTECHNOLOGY
Sara Maleki, Azadeh Haghighatzadeh, Amin Attarzadeh
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引用次数: 0

摘要

本研究利用 V 型势能描述了具有价带轮廓的 GaAs/GaAsSb/GaAs 单量子阱。利用外部静态电场(E-field)和高频强激光照射来检验一阶线性和三阶非线性光学特性。理论建模采用了紧凑密度矩阵和两级系统框架下的迭代过程。应用位置相关有效质量近似法求解了薛定谔方程,并评估了量子阱价带内与重空穴有关的两个最低束缚态的能态及其相应的波函数。我们将电场、量子井的半宽度和锑(Sb)含量对光学特性的影响纳入其中,从而扩展了对单一 V 形势垒的研究。对强激光场和上述因素综合影响的研究表明,线性和非线性光学特性的峰值位置和振幅受激光强度变化的影响很大。具体来说,我们观察到,在较高的激光修整参数下,电场的应用发挥了重要作用。当激光修整参数值较低时,井的半宽和锑含量的影响就会变得突出。值得注意的是,我们的发现将在光子学、光电子学和相关领域产生潜在的实际应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Linear and nonlinear optical properties of laser-dressed V-shaped gallium arsenide/gallium arsenide antimonide/gallium arsenide quantum wells with different dressing parameters: a theoretical modeling
A single GaAs/GaAsSb/GaAs quantum well having a valence band profile was described in this study using the V-shaped potential. An external static electric field (E-field) and a high-frequency intense laser irradiation were utilized to examine the first-order linear and third-order nonlinear optical properties. The theoretical modeling was achieved using a compact-density matrix and iterative process in a two-level system framework. The position-dependent effective mass approximation was applied to solve the Schrödinger equation and evaluating the energy states and their corresponding wavefunctions for the two lowest bound states within the quantum well’s valence band with regards to a heavy hole. We extended the investigation of the single V-shaped potential by incorporating the effects of the E-field, the well’s half-width, and antimony (Sb) content on optical characteristics. The study on the combined effects of the intense laser field and the mentioned factors revealed that the peak positions and amplitudes of the linear and nonlinear optical characteristics were strongly influenced by variation in the laser strength. Specifically, we observed, that under higher laser dressing parameters, the application of the electric field played an important role. This occurred when the impact of the well’s half-width and Sb content became prominent at values of lower laser-dressing parameters. It is significant to note that our findings will have potential real-world applications in photonics, optoelectronics, and related areas.
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来源期刊
Journal of Nanophotonics
Journal of Nanophotonics 工程技术-光学
CiteScore
2.60
自引率
6.70%
发文量
42
审稿时长
3 months
期刊介绍: The Journal of Nanophotonics publishes peer-reviewed papers focusing on the fabrication and application of nanostructures that facilitate the generation, propagation, manipulation, and detection of light from the infrared to the ultraviolet regimes.
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