4H-SiC SGT MOSFET 的设计

2024 IEEE 4th International Conference on Power, Electronics and Computer Applications (ICPECA) Pub Date : 2024-01-26 DOI:10.1109/ICPECA60615.2024.10471111

Haoran Wu, Shiguang Shang, Zilong Huang

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引用次数: 0

摘要

为了解决比导通电阻（Ron，sp）和击穿电压（BV）之间的权衡关系问题，我们提出了一种 SiC SGT MOSFET，并展示了其工艺流程和一些影响其静态特性的参数，如 EPI 浓度、屏蔽栅氧化物厚度等。此外，在 UIS 测试中，拟议结构的新型结构的雪崩耐受性介于 VDMOS 和沟槽 MOSFET 之间，这可能意味着在实际应用中具有更好的 EAS 性能。

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The Design of a 4H-SiC SGT MOSFET

A SiC SGT MOSFET is proposed to solve the problem of the trade-off relationship between specific on-resistance (Ron, sp) and breakdown voltage (BV), which demonstrated its process flow and some parameters which influence its static characteristics such as EPI Concentration, Shield gate Oxide thickness and so on. In addition, in UIS tests, the avalanche tolerance of the novel structure of the proposed structure is between than that of VDMOS and Trench MOSFET, which may mean the better EAS in practical application.

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2024 IEEE 4th International Conference on Power, Electronics and Computer Applications (ICPECA)

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