MGeBr3(M = Rb、Cs、Fr)溴化包晶的(GGA+PBE)研究:结构、电子和光学特性

IF 1 4区 材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
O. Alsalmi, M. M. Saad H.-E.
{"title":"MGeBr3(M = Rb、Cs、Fr)溴化包晶的(GGA+PBE)研究:结构、电子和光学特性","authors":"O. Alsalmi, M. M. Saad H.-E.","doi":"10.15251/djnb.2024.191.25","DOIUrl":null,"url":null,"abstract":"First-principles DFT calculations by utilizing FP-LAPW under GGA+PBE method are performed to investigate the structural, electronic and optical characteristics of bromide perovskites MGeBr3 (M = Rb, Cs, Fr). It is found that the cubic structure (Pm-3m) and optimized lattice constants are in good agreement with the previous data. Our GGA+PBE results reveal that MGeBr3 show nonmagnetic semiconductor behavior with direct bandgap (Eg = 0.925 eV (M = Rb), 0.898 eV (M = Cs), 0.952 eV (M = Fr)) along the L–L symmetry direction. Formation energy, octahedral ration and tolerance factor for MGeBr3 have also been calculated. The 2-D charge densities confirm that the chemical bonds (Ge2+–Br- ) and (M+–Br- ) follow the covalent and ionic bonding types. Moreover, we have calculated and discussed the optical parameters, dielectric constants, absorption, conductivity and refractivity. The calculated electronic and optical properties show the narrow band-gap, high absorption and semiconductor nature making these inorganic materials suitable for optoelectronics applications.","PeriodicalId":11233,"journal":{"name":"Digest Journal of Nanomaterials and Biostructures","volume":null,"pages":null},"PeriodicalIF":1.0000,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A (GGA+PBE) investigation of MGeBr3 (M = Rb, Cs, Fr) bromide perovskites: structural, electronic, and optical characteristics\",\"authors\":\"O. Alsalmi, M. M. Saad H.-E.\",\"doi\":\"10.15251/djnb.2024.191.25\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"First-principles DFT calculations by utilizing FP-LAPW under GGA+PBE method are performed to investigate the structural, electronic and optical characteristics of bromide perovskites MGeBr3 (M = Rb, Cs, Fr). It is found that the cubic structure (Pm-3m) and optimized lattice constants are in good agreement with the previous data. Our GGA+PBE results reveal that MGeBr3 show nonmagnetic semiconductor behavior with direct bandgap (Eg = 0.925 eV (M = Rb), 0.898 eV (M = Cs), 0.952 eV (M = Fr)) along the L–L symmetry direction. Formation energy, octahedral ration and tolerance factor for MGeBr3 have also been calculated. The 2-D charge densities confirm that the chemical bonds (Ge2+–Br- ) and (M+–Br- ) follow the covalent and ionic bonding types. Moreover, we have calculated and discussed the optical parameters, dielectric constants, absorption, conductivity and refractivity. The calculated electronic and optical properties show the narrow band-gap, high absorption and semiconductor nature making these inorganic materials suitable for optoelectronics applications.\",\"PeriodicalId\":11233,\"journal\":{\"name\":\"Digest Journal of Nanomaterials and Biostructures\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.0000,\"publicationDate\":\"2024-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Digest Journal of Nanomaterials and Biostructures\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.15251/djnb.2024.191.25\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest Journal of Nanomaterials and Biostructures","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.15251/djnb.2024.191.25","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

利用 GGA+PBE 方法下的 FP-LAPW 进行了第一性原理 DFT 计算,研究了溴化物包晶 MGeBr3(M = Rb、Cs、Fr)的结构、电子和光学特性。研究发现,其立方结构(Pm-3m)和优化的晶格常数与之前的数据十分吻合。我们的 GGA+PBE 结果表明,MGeBr3 沿 L-L 对称方向具有直接带隙(Eg = 0.925 eV (M = Rb)、0.898 eV (M = Cs)、0.952 eV (M = Fr)),表现出非磁性半导体行为。此外,还计算了 MGeBr3 的形成能、八面体比和容差因子。二维电荷密度证实化学键 (Ge2+-Br- ) 和 (M+-Br- ) 属于共价键和离子键类型。此外,我们还计算并讨论了光学参数、介电常数、吸收率、电导率和折射率。计算得出的电子和光学特性表明,这些无机材料具有窄带隙、高吸收和半导体特性,适合光电子学应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A (GGA+PBE) investigation of MGeBr3 (M = Rb, Cs, Fr) bromide perovskites: structural, electronic, and optical characteristics
First-principles DFT calculations by utilizing FP-LAPW under GGA+PBE method are performed to investigate the structural, electronic and optical characteristics of bromide perovskites MGeBr3 (M = Rb, Cs, Fr). It is found that the cubic structure (Pm-3m) and optimized lattice constants are in good agreement with the previous data. Our GGA+PBE results reveal that MGeBr3 show nonmagnetic semiconductor behavior with direct bandgap (Eg = 0.925 eV (M = Rb), 0.898 eV (M = Cs), 0.952 eV (M = Fr)) along the L–L symmetry direction. Formation energy, octahedral ration and tolerance factor for MGeBr3 have also been calculated. The 2-D charge densities confirm that the chemical bonds (Ge2+–Br- ) and (M+–Br- ) follow the covalent and ionic bonding types. Moreover, we have calculated and discussed the optical parameters, dielectric constants, absorption, conductivity and refractivity. The calculated electronic and optical properties show the narrow band-gap, high absorption and semiconductor nature making these inorganic materials suitable for optoelectronics applications.
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来源期刊
Digest Journal of Nanomaterials and Biostructures
Digest Journal of Nanomaterials and Biostructures 工程技术-材料科学:综合
CiteScore
1.50
自引率
22.20%
发文量
116
审稿时长
4.3 months
期刊介绍: Under the aegis of the Academy of Romanian Scientists Edited by: -Virtual Institute of Physics operated by Virtual Company of Physics.
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