{"title":"在三种 n(p) 型退相 GaAS1-xTex(Sbx,Px)晶体合金中获得的莫特金属-绝缘体转变中的临界杂质密度","authors":"Huynh Van Cong","doi":"10.59324/ejaset.2024.2(1).05","DOIUrl":null,"url":null,"abstract":"By basing on the same physical model and treatment method, as used in our recent works [1, 2, 3, 4, 5], we will investigate the critical impurity densities in the metal-insulator transition (MIT), obtained in three n(p)-type degenerate [GaAs1−xTex,GaAs1−xTex,GaAs1−xTex]- crystalline alloys, 0≤x≤1, being due to the effects of the size of donor (acceptor) d(a)-radius, rd(a), the x-Ge concentration, and finally the high d(a)-density, N, assuming that all the impurities are ionized even at T=0 K. In such n(p)-type degenerate crystalline alloys, we will determine:(i)-the critical impurity densities NCDn(CDp)(rd(a),x) in the MIT, as that given in Eq. (10), by using an empirical Mott parameter","PeriodicalId":517802,"journal":{"name":"European Journal of Applied Science, Engineering and Technology","volume":"19 6","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Critical Impurity Densities in the Mott Metal-Insulator Transition, Obtained in Three n(p) - Type Degenerate GaAS1-xTex(Sbx,Px)-Crystalline Alloys\",\"authors\":\"Huynh Van Cong\",\"doi\":\"10.59324/ejaset.2024.2(1).05\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By basing on the same physical model and treatment method, as used in our recent works [1, 2, 3, 4, 5], we will investigate the critical impurity densities in the metal-insulator transition (MIT), obtained in three n(p)-type degenerate [GaAs1−xTex,GaAs1−xTex,GaAs1−xTex]- crystalline alloys, 0≤x≤1, being due to the effects of the size of donor (acceptor) d(a)-radius, rd(a), the x-Ge concentration, and finally the high d(a)-density, N, assuming that all the impurities are ionized even at T=0 K. In such n(p)-type degenerate crystalline alloys, we will determine:(i)-the critical impurity densities NCDn(CDp)(rd(a),x) in the MIT, as that given in Eq. (10), by using an empirical Mott parameter\",\"PeriodicalId\":517802,\"journal\":{\"name\":\"European Journal of Applied Science, Engineering and Technology\",\"volume\":\"19 6\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"European Journal of Applied Science, Engineering and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.59324/ejaset.2024.2(1).05\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"European Journal of Applied Science, Engineering and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.59324/ejaset.2024.2(1).05","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
基于我们最近的研究成果[1, 2, 3, 4, 5]中使用的相同物理模型和处理方法，我们将研究在三种 n(p) 型退化[GaAs1-xTex,GaAs1-xTex,GaAs1-xTex]晶体合金（0≤x≤1）中获得的金属-绝缘体转变（MIT）临界杂质密度、GaAs1-xTex、GaAs1-xTex]- 晶体合金（0≤x≤1）中得到的临界杂质密度，这是由于供体（受体）d(a)半径 rd(a)、x-Ge 浓度以及高 d(a)-density N 的影响造成的。在这种 n（p）型退化结晶合金中，我们将通过使用经验莫特参数来确定：(i) MIT 中的临界杂质密度 NCDn（CDp）（rd（a），x），如公式 (10) 所示
Critical Impurity Densities in the Mott Metal-Insulator Transition, Obtained in Three n(p) - Type Degenerate GaAS1-xTex(Sbx,Px)-Crystalline Alloys
By basing on the same physical model and treatment method, as used in our recent works [1, 2, 3, 4, 5], we will investigate the critical impurity densities in the metal-insulator transition (MIT), obtained in three n(p)-type degenerate [GaAs1−xTex,GaAs1−xTex,GaAs1−xTex]- crystalline alloys, 0≤x≤1, being due to the effects of the size of donor (acceptor) d(a)-radius, rd(a), the x-Ge concentration, and finally the high d(a)-density, N, assuming that all the impurities are ionized even at T=0 K. In such n(p)-type degenerate crystalline alloys, we will determine:(i)-the critical impurity densities NCDn(CDp)(rd(a),x) in the MIT, as that given in Eq. (10), by using an empirical Mott parameter
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