On Increasing of Density of Elements of Double Boost DC-DC Converter. Influence of Mismatch-Induced Stress and Porosity of Materials on the Technological Process

In this paper we introduce an approach to increase density of field-effect heterotransistors and heterodiodes in the framework of double boost DC-DC converter. In the framework of the approach we consider manufacturing the inverter in hetero structure with specific configuration. Several required areas of the heterostructure should be doped by diffusion or ion implantation. After that dopant and radiation defects should by annealed in the framework of the optimized scheme. We also consider an approach to decrease value of mismatch-induced stress in the considered heterostructure. We introduce an analytical approach to analyze mass and heat transport in heterostructures during manufacturing of integrated circuits with account mismatch-induced stress.