硅在集成电路应用中被其他材料取代的前景

Yuxuan Liu, Ziyu Wang, Sichen Lv
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引用次数: 0

摘要

目前,硅是应用最广泛的半导体材料。但近年来,集成电路的发展遇到了越来越多的限制,其中单晶硅材料的物理特性是一个重要原因。随着集成电路规模的扩大和制造工艺的不断减少,硅已逐渐达到其物理极限。同时,硅的热值较高,性能损耗较大。因此,人们正在积极寻求硅在集成电路中的替代品。本文综述了石墨烯、碳化硅、氮化镓三种新型半导体材料的特性及其应用研究现状。碳化硅和氮化镓材料在功率集成电路中表现突出,而石墨烯也有很多应用。然而,它们在大规模应用之前仍存在许多缺陷。总之,在集成电路应用中,当新材料取代硅时,仍有许多问题有待解决。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Prospects for silicon being replaced by other materials in integratedcircuit applications
Currently, silicon is the most widely used semiconductor material. However, in recent years, the development of integrated circuits has encountered more and more limitations, among which the physical characteristics of single-crystal silicon materials are an important reason. With the expansion of integrated circuit scale and the continuous reduction of manufacturing processes, silicon has gradually reached its physical limit. At the same time, silicon has a higher calorific value and a higher performance loss. Therefore, people are actively seeking alternatives to silicon in integrated circuits. This paper reviews the characteristics of three new semiconductor materials, graphene, silicon carbide, gallium nitride, and current research on their applications. Silicon carbide and gallium nitride materials have shown outstanding performance in power-integrated circuits, while graphene has many applications. However, they still have many defects before being used on a large scale. In short, in integrated circuit applications, when new materials replace silicon, many problems remain to be solved.
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