DESIGN AND ANALYSIS OF ELECTRICAL CHARACTERISTICS OF INVERTED-T JUNCTIONLESS (JL) FET THROUGH GEOMETRIC AND PROCESS VARIATIONS FOR HIGH FREQUENCY APPLICATIONS

An inverted-T structure is implemented with the Junctionless (JL) topology at nanoscale dimensions. The Inverted-T Junctionless (ITJL) FET features a multi-fin architecture that utilizes the unused space within the fins and combines it with the junctionless topology, maintaining the same doping concentration from source to drain. In order to mitigate the short channel effects and overcome the fabrication challenges, an inverted-T FET has been designed. The crucial performance parameters of device are explored by varying the geometric dimensions and process parameters. The performance of ITJLFET is measured by varying different parameters namely temperature (T), doping concentration (Nd), work function 𝒎 ), and dielectric constant (K) at 30-nm technology node and effect of geometric variations are measured by altering the gate length (Lg) and oxide thickness (Tox). Inverted-T junctionless field effect transistor (ITJLFET) is designed with different gate lengths in the range of 14 nm to 30 nm and shows the improvement in ION by 64% as compared to the conventional JLFET. The parametric analysis like transfer characteristics (Id-Vgs), Ion/IOFF ratio, subthreshold swing (SS), drain induced barrier lowering (DIBL) and gate capacitance (Cgg) are investigated for 250 K to 350 K. From the results, it is perceived that temperature has less effect on the Inverted-T junctionless transistor performance. The cut-off frequency for the designed device is calculated and observed to be in the range of 0.3 to 1.5 THz. Hence, device can be used for high-frequency applications at the submicron regime.