Minimizing the Effect of Low Moisture Stress in Pearl Millet (Pennisetum glaucum L.) by Regulating Growth, Yield and Antioxidant Defense System Via Foliar Applied Silicon

Most abundant element on earth crust is silicon (Si), easily available and mostly used in farming against low moisture stress in arid regions. Thus, a pot experiment was accomplished for identifying the beneficial effects of Si on the growth, productivity and activity of antioxidants in pearl millet. The millet plant was arranged in complete randomized design (CRD) under normal and drought stress condition and treated with four level of Si (0.0, 2.5, 5.0, and 7.5 mmol/L). The results revealed that foliar 5.0 mmol/L of foliar applied Si improved the growth traits (leaf fresh weight 18.99%, stem fresh weight 9.34%, root fresh weight 28.75%, root dry weight 33.11%, plant height 21.7%, and stem diameter 28.26%) and yield traits (no. of grains per spike 9.22%, and grain yield 15.89%). While it enhances the activity of antioxidants as (catalase 8.1%, peroxidase 36.84%, and ascorbate peroxidase 17.16%). In short, foliar application of Si is an effective strategy for improving all the growth and yield traits as well as some of the antioxidants in the presence of low moisture stress in pearl millet crop. In this manner, foliar applied 5.0 mmol/L of Si will be recommended as the best doze for controlling the negative impact on pearl millet crop. Hopefully, the findings of this research will be helpful for the future research against stress related challenges.