SnSb2Te4 中的压力诱导超导性

Yanmei Ma, Hongbo Wang, Ruihong Li, Han Liu, Jian Zhang, Xianyu Wang, Q. Jing, Xu Wang, Wenping Dong, Jinman Chen, Bingze Wu, Yonghao Han, Dan Zhou, Chunxiao Gao
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引用次数: 0

摘要

由于其独特的组成和结构特征,二元和三元铬化物家族中的层状范德华固体为探索新型奇异结构和状态(如拓扑绝缘体和超导体)提供了肥沃的试验平台。在此,我们对三元成员 SnSb2Te4 的结构变化和相关电输运行为进行了全面研究。在 45.6 GPa 的压力下,观察到三种截然不同的结构相变,高压 X 射线衍射图样的变化提供了有力的证据。由于出现了新的衍射,我们观察到在 6.3 GPa 时出现了相 II(单斜,C2/m),在 15.5 GPa 时出现了相 III(单斜,C2/c),在 17.2 GPa 时出现了相 IV(具有置换无序性的体心立方,Im-3m)。根据在低温和高压条件下进行的电学测量,SnSb2Te4 中出现了两种压力诱导超导状态。第一种状态出现在 12.3-17.1 GPa 的范围内。Tc 与压力的正相关性表明,上述状态与单斜 C2/m 相有关。在 > 17.1 GPa 时,出现了第二种超导状态,其与 Tc 的压力关系为负。它与体心立方固溶相有关,是置换无序晶体结构的特征。发现 SnSb2Te4 中的压力诱导超导电性受到压力下结构相变的影响,可能有助于理解环境条件下拓扑绝缘态与衍生超导电性之间的普遍关系。Ab initio 理论计算显示,电子拓扑转变发生在大约 2.0 GPa 时,其特点是费米级附近的电子态密度分布发生了明显变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Pressure-induced superconductivity in SnSb2Te4
Owing to their unique compositional and structural characteristics, layered van der Waals solids in binary and ternary chalcogenide families provide a fertile testbed for exploring novel exotic structures and states, e.g., topological insulators and superconductors. Herein, a comprehensive study on the structural variations and correlated electrical transport behavior of SnSb2Te4, a ternary member, has been carried out considering elevated pressures. Under 45.6 GPa, three distinct structural phase transitions have been observed, with strong evidence from the variations of high-pressure X-ray diffraction patterns. The onsets of phase II (monoclinic, C2/m ) at 6.3 GPa, phase III (monoclinic, C2/c ) at 15.5 GPa, and phase IV (body-centered cubic with substitutional disorder, Im-3m ) at 17.2 GPa have been observed owing to the emergence of new diffractions. Based on electrical measurements at low temperature and high pressure conditions, two pressure-induced superconducting states have been distinguished in SnSb2Te4. The first state occurs in the range of 12.3-17.1 GPa. The positive pressure dependence on Tc indicates that the aforementioned state is related to the monoclinic C2/m phase. At > 17.1 GPa, the second superconducting state emerges, with the negative pressure dependence on Tc . It relates to the body-centered cubic solid solution phase, which is characteristic of a substitutional disordered crystal structure. The discovery that the pressure-induced superconductivity in SnSb2Te4 is affected by structural phase transitions under pressure may help understand the universal relationship between the ambient condition topological insulating state and derived superconductivity. Ab initio theoretical calculations reveal that an electronic topological transition takes place at approximately 2.0 GPa, which is featured by the obvious changes in the distribution of electronic density of states near the Fermi level.
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