(La0.06Ga0.94)2O3:Eu 薄膜的分散特性

O. Bordun, B. Bordun, I. Medvid, I. Kukharskyy, D.M. Maksymchuk, I. M. Kofliuk
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引用次数: 0

摘要

研究了通过射频离子等离子体溅射获得的 (La0.06Ga0.94)2O3:Eu 薄膜折射率的分散性。研究发现,薄膜具有与 β- Ga2O3 单斜结构相对应的多晶结构。研究表明,新沉积的薄膜具有异常分散的特点,而在氩气中退火后,则可观察到折射率的正常分散。研究发现,在正常色散条件下,可见光谱区折射率的光谱依赖性主要由电子跃迁决定,电子跃迁从 2p 态氧带(形成价带的上填充层)到由氧的 2p 态和镓的 4s 态杂化形成的导带底部。分析和比较了在氩气中退火的薄膜的两个单振子近似模型,并确定了近似参数、色散能、化学键离子度、配位数和静态折射率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Dispersion properties of (La0.06Ga0.94)2O3:Eu thin films
The dispersion of the refractive index of (La0.06Ga0.94)2O3:Eu thin films obtained by radio-frequency ion-plasma sputtering has been studied. It was found that the films have a polycrystalline structure corresponding to the monoclinic structure of β- Ga2O3. It is shown that the freshly deposited films are characterised by an abnormal dispersion, and after annealing in argon, a normal dispersion of the refractive index is observed. It was found that at normal dispersion, the spectral dependence of the refractive index in the visible region of the spectrum is mainly determined by electronic transitions from the 2p-state oxygen band, which form the upper filled level of the valence band to the bottom of the conduction band formed by hybridised 2p-states of oxygen and 4s-states of gallium. Two single-oscillator approximation models were analysed and compared for the films annealed in argon, and the approximation parameters, dispersion energy, degree of chemical bond ionicity, coordination number, and static refractive index were determined.
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