Parameter extraction using the transfer characteristics of vertically stacked Si nanosheet MOSFETs

We present a critical assessment and discussion of the presence of parasitic source-and-drain series resistance and normal electric field-dependent mobility degradation in undoped Si nanosheet MOSFETs. A simple explicit Lambert W function-based closed-form model, continuously valid from sub-threshold to strong conduction, was used to clearly describe the transfer characteristics. The model was applied to experimental vertically stacked GAA undoped Si nanosheet MOSFETs using phenomenon-related model parameter values extracted from measured data through suitable numerical optimization procedures. The conducted analysis reveals and explains how these two effects produce analogous deleterious consequences on these devices’ transfer characteristics.