钻石 TeraFET 中的电流驱动太赫兹振荡

Q4 Engineering
M. Hasan, Nezih Pala, Michael Shur
{"title":"钻石 TeraFET 中的电流驱动太赫兹振荡","authors":"M. Hasan, Nezih Pala, Michael Shur","doi":"10.1142/s0129156424400159","DOIUrl":null,"url":null,"abstract":"We report on sub-terahertz plasmonic wave generation in the 2DEG channel of diamond TeraFET when biased by a DC current at the drain. Our numerical results demonstrated that p-diamond can support resonant oscillation of 300 GHz at room temperature, allowing it to function as a sub-THz emitter. We investigated the impact of different channel lengths, gate biases, drift velocities, and temperatures on the fundamental mode oscillation. The model incorporated the decay factors owing to electron scattering and electron fluid viscosity.","PeriodicalId":35778,"journal":{"name":"International Journal of High Speed Electronics and Systems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Current-Driven Terahertz Oscillations in Diamond TeraFET\",\"authors\":\"M. Hasan, Nezih Pala, Michael Shur\",\"doi\":\"10.1142/s0129156424400159\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on sub-terahertz plasmonic wave generation in the 2DEG channel of diamond TeraFET when biased by a DC current at the drain. Our numerical results demonstrated that p-diamond can support resonant oscillation of 300 GHz at room temperature, allowing it to function as a sub-THz emitter. We investigated the impact of different channel lengths, gate biases, drift velocities, and temperatures on the fundamental mode oscillation. The model incorporated the decay factors owing to electron scattering and electron fluid viscosity.\",\"PeriodicalId\":35778,\"journal\":{\"name\":\"International Journal of High Speed Electronics and Systems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-03-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of High Speed Electronics and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1142/s0129156424400159\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of High Speed Electronics and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/s0129156424400159","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0

摘要

我们报告了金刚石 TeraFET 的 2DEG 沟道在漏极直流电流偏置时产生的亚太赫兹等离子波。我们的数值结果表明,p-金刚石能在室温下支持 300 GHz 的谐振振荡,从而使其发挥亚太赫兹发射器的功能。我们研究了不同沟道长度、栅极偏压、漂移速度和温度对基模振荡的影响。该模型包含了电子散射和电子流体粘度造成的衰减因素。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Current-Driven Terahertz Oscillations in Diamond TeraFET
We report on sub-terahertz plasmonic wave generation in the 2DEG channel of diamond TeraFET when biased by a DC current at the drain. Our numerical results demonstrated that p-diamond can support resonant oscillation of 300 GHz at room temperature, allowing it to function as a sub-THz emitter. We investigated the impact of different channel lengths, gate biases, drift velocities, and temperatures on the fundamental mode oscillation. The model incorporated the decay factors owing to electron scattering and electron fluid viscosity.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
International Journal of High Speed Electronics and Systems
International Journal of High Speed Electronics and Systems Engineering-Electrical and Electronic Engineering
CiteScore
0.60
自引率
0.00%
发文量
22
期刊介绍: Launched in 1990, the International Journal of High Speed Electronics and Systems (IJHSES) has served graduate students and those in R&D, managerial and marketing positions by giving state-of-the-art data, and the latest research trends. Its main charter is to promote engineering education by advancing interdisciplinary science between electronics and systems and to explore high speed technology in photonics and electronics. IJHSES, a quarterly journal, continues to feature a broad coverage of topics relating to high speed or high performance devices, circuits and systems.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信