{"title":"钻石 TeraFET 中的电流驱动太赫兹振荡","authors":"M. Hasan, Nezih Pala, Michael Shur","doi":"10.1142/s0129156424400159","DOIUrl":null,"url":null,"abstract":"We report on sub-terahertz plasmonic wave generation in the 2DEG channel of diamond TeraFET when biased by a DC current at the drain. Our numerical results demonstrated that p-diamond can support resonant oscillation of 300 GHz at room temperature, allowing it to function as a sub-THz emitter. We investigated the impact of different channel lengths, gate biases, drift velocities, and temperatures on the fundamental mode oscillation. The model incorporated the decay factors owing to electron scattering and electron fluid viscosity.","PeriodicalId":35778,"journal":{"name":"International Journal of High Speed Electronics and Systems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Current-Driven Terahertz Oscillations in Diamond TeraFET\",\"authors\":\"M. Hasan, Nezih Pala, Michael Shur\",\"doi\":\"10.1142/s0129156424400159\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on sub-terahertz plasmonic wave generation in the 2DEG channel of diamond TeraFET when biased by a DC current at the drain. Our numerical results demonstrated that p-diamond can support resonant oscillation of 300 GHz at room temperature, allowing it to function as a sub-THz emitter. We investigated the impact of different channel lengths, gate biases, drift velocities, and temperatures on the fundamental mode oscillation. The model incorporated the decay factors owing to electron scattering and electron fluid viscosity.\",\"PeriodicalId\":35778,\"journal\":{\"name\":\"International Journal of High Speed Electronics and Systems\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-03-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of High Speed Electronics and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1142/s0129156424400159\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of High Speed Electronics and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/s0129156424400159","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
Current-Driven Terahertz Oscillations in Diamond TeraFET
We report on sub-terahertz plasmonic wave generation in the 2DEG channel of diamond TeraFET when biased by a DC current at the drain. Our numerical results demonstrated that p-diamond can support resonant oscillation of 300 GHz at room temperature, allowing it to function as a sub-THz emitter. We investigated the impact of different channel lengths, gate biases, drift velocities, and temperatures on the fundamental mode oscillation. The model incorporated the decay factors owing to electron scattering and electron fluid viscosity.
期刊介绍:
Launched in 1990, the International Journal of High Speed Electronics and Systems (IJHSES) has served graduate students and those in R&D, managerial and marketing positions by giving state-of-the-art data, and the latest research trends. Its main charter is to promote engineering education by advancing interdisciplinary science between electronics and systems and to explore high speed technology in photonics and electronics. IJHSES, a quarterly journal, continues to feature a broad coverage of topics relating to high speed or high performance devices, circuits and systems.