阳离子表面活性剂(CTAB)辅助制备二维氮化石墨碳(g-C3N4)薄片提高超级电容器性能

Crystals Pub Date : 2024-03-27 DOI:10.3390/cryst14040312
Sagar M. Mane, A. Teli, S. Beknalkar, Deepak R. Patil, Jae Cheol Shin, Jaewoong Lee
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引用次数: 0

摘要

无金属石墨氮化碳(g-C3N4)具有独特的物理化学特性,在包括能源储存和转换在内的各个领域正受到越来越多的关注。然而,由于其表面积极小,这种材料的电化学性能受到限制。加入表面活性剂是解决表面积问题的方法之一,从而提高 g-C3N4 的电化学性能。本研究探讨了一种方法,旨在通过使用阳离子表面活性剂十六烷基三甲基溴化铵(CTAB)来提高二维 g-C3N4 薄片的超级电容能力。电化学研究表明,与原始 g-C3N4 相比,CTAB 辅助的 g-C3N4 片在比电容、循环稳定性和比较速率能力方面都有显著提高。含 CTAB 的 g-C3N4 比电容超过约 28%,为 162.8 F g-1。在 0.5 mA cm-2 条件下,不含 CTAB 的电极材料的比电容值为 117.7 F g-1。电化学性能的提高可归功于 CTAB 表面活性剂促进了表面积的增大、电子传导性的提高和电荷转移动力学的优化。我们的目标是为先进的储能系统提高基于 g-C3N4 的超级电容器的整体性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Cationic-Surfactant (CTAB) Assisted Preparation of 2D Graphitic Carbon Nitride (g-C3N4) Sheets Advances Supercapacitive Performance
The distinct physicochemical characteristics of metal-free graphitic carbon nitride (g-C3N4) are gaining interest in various fields, including energy storage and conversion. However, the electrochemical performance of this material is constrained, owing to its minimal surface area. Incorporating a surfactant is one of the ways to resolve the issue of surface area and therefore improve the electrochemical performance of g-C3N4. This research delves into a method aimed at improving the supercapacitive capabilities of 2D g-C3N4 sheets through the implementation of a cationic surfactant, cetyltrimethylammonium bromide (CTAB). Electrochemical studies reveal that the CTAB-assisted g-C3N4 sheets exhibit remarkable improvements in specific capacitance, cyclic stability, and comparative rate capability in relation to pristine g-C3N4. The specific capacitance of g-C3N4 with CTAB exceeds about 28%, which gives 162. 8 F g−1. This value is 117.7 F g−1 for electrode material without CTAB at 0.5 mA cm−2. This improved electrochemical performance can be credited to the heightened surface area, improved electronic conductivity, and optimized charge transfer kinetics facilitated by the CTAB surfactant. We aim to emphasize the enhancement of the overall performance of g-C3N4-based supercapacitors for advanced energy storage systems.
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