在氮气环境中通过铝基合金蒸发生长自发成核 AlN 晶体

Crystals Pub Date : 2024-03-30 DOI:10.3390/cryst14040331
Xiaochun Tao, Yongkuan Xu, Jianli Chen, Yonggui Yu, Xiaofang Qi, Wencheng Ma, Zhanggui Hu
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引用次数: 0

摘要

采用改进的气相传输方法,在 1700 °C 温度下通过自发成核成功地生长出了面积从 1 mm2 到 2 mm2 不等的氮化铝 (AlN) 晶体。在这种方法中,铜铝合金作为铝(Al)源,氮气(N2)作为氮源。通过立体显微镜、拉曼光谱仪、光致发光(PL)和二次离子质谱(SIMS)对 AlN 晶体的形态和结晶质量进行了表征。根据拉曼光谱,沉积在石墨盖板上的氮化铝晶体呈现矩形和六角形,分别为 m 面和 c 面氮化铝。经测量,矩形和六角形晶粒的 E2(高)全宽半最大值(FWHM)分别为 6.00 cm-1 和 6.06 cm-1,表明结晶质量很高。然而,PL 和 SIMS 分析表明晶体中存在与氧有关的杂质。本文阐明了改良气相传输法的生长机理,并强调了铜铝合金在维持低温反应中的作用。铜(Cu)的加入不仅促进了可持续反应,还为氮化铝单晶的生长提供了一个新的视角。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Growth of Spontaneous Nucleation AlN Crystals by Al-Base Alloy Evaporation in Nitrogen Atmosphere
Aluminum nitride (AlN) crystals with areas ranging from 1 mm2 to 2 mm2 were successfully grown through spontaneous nucleation at 1700 °C using a modified vapor transport method. In this approach, Cu–Al alloy served as the source of aluminum (Al), and nitrogen (N2) was employed as the nitrogen source. The morphology and crystalline quality of the AlN crystals were characterized by a stereo microscope, Raman spectrometer, photoluminescence (PL) and secondary-ion mass spectrometry (SIMS). Deposited on the graphite lid, the as-grown AlN crystals exhibited both rectangular and hexagonal shapes, identified as m-plane and c-plane AlN, respectively, based on Raman spectroscopy. The full width half maximum (FWHM) values of E2 (high) for the rectangular and hexagonal grains were measured to be 6.00 cm−1 and 6.06 cm−1, respectively, indicating high crystalline quality. However, PL and SIMS analysis indicated the presence of impurities associated with oxygen in the crystals. This paper elucidates the growth mechanism of the modified vapor transport method and highlights the role of the Cu–Al alloy in sustaining reactions at lower temperatures. The addition of copper (Cu) not only facilitates sustainable reactions, but also provides a novel perspective for the growth of AlN single crystals.
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