{"title":"在平面同轴硅 (001) 衬底上生长的 1.3 μm InAs/GaAs 量子点激光器具有高斜率效率和低差分电阻","authors":"Feng Lin, Jun Wang, Hao Zhai, Shuaicheng Liu, Qing Ge, Yanan Chen, Chuanjiang Liu, Kaize Mao, Hao Liu, Yiming Bai, Qi Wang, Yongqing Huang, Xiaomin Ren","doi":"10.1088/1612-202x/ad3439","DOIUrl":null,"url":null,"abstract":"We report electrically pumped continuous-wave (CW) InAs/GaAs quantum dot lasers monolithically grown on planar on-axis Si (001) substrates. Combining an asymmetric waveguide epitaxy structure with aluminium-free upper cladding layers and a symmetrical cathode chip structure, 1.3 <italic toggle=\"yes\">μ</italic>m band lasers with low differential resistance and high slope-efficiency have been achieved. Moreover, the optimized symmetrical cathode structure of the laser chips is used to improve the slope-efficiency by reducing the differential resistance and waste heat. The Fabry–Perot broad-stripe edge-emitting lasers with 2000 <italic toggle=\"yes\">μ</italic>m cavity length and 15 <italic toggle=\"yes\">μ</italic>m stripe width achieve a single-facet output power of 73 mW, a single-facet slope efficiency of 0.165 W A<sup>−1</sup>, and a differential resistance of 1.31 Ω at ∼1.31 <italic toggle=\"yes\">μ</italic>m wavelength under CW conditions at room temperature (25 °C). Importantly, these results provide an effective strategy to achieve 1.3 <italic toggle=\"yes\">μ</italic>m wavelength band single-mode distributed feedback lasers directly on planar on-axis Si (001) substrates with high efficiency.","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":null,"pages":null},"PeriodicalIF":16.4000,"publicationDate":"2024-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"1.3 μm InAs/GaAs quantum-dot lasers grown on planar on-axis Si (001) substrates with high slope-efficiency and low differential resistance\",\"authors\":\"Feng Lin, Jun Wang, Hao Zhai, Shuaicheng Liu, Qing Ge, Yanan Chen, Chuanjiang Liu, Kaize Mao, Hao Liu, Yiming Bai, Qi Wang, Yongqing Huang, Xiaomin Ren\",\"doi\":\"10.1088/1612-202x/ad3439\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report electrically pumped continuous-wave (CW) InAs/GaAs quantum dot lasers monolithically grown on planar on-axis Si (001) substrates. Combining an asymmetric waveguide epitaxy structure with aluminium-free upper cladding layers and a symmetrical cathode chip structure, 1.3 <italic toggle=\\\"yes\\\">μ</italic>m band lasers with low differential resistance and high slope-efficiency have been achieved. Moreover, the optimized symmetrical cathode structure of the laser chips is used to improve the slope-efficiency by reducing the differential resistance and waste heat. The Fabry–Perot broad-stripe edge-emitting lasers with 2000 <italic toggle=\\\"yes\\\">μ</italic>m cavity length and 15 <italic toggle=\\\"yes\\\">μ</italic>m stripe width achieve a single-facet output power of 73 mW, a single-facet slope efficiency of 0.165 W A<sup>−1</sup>, and a differential resistance of 1.31 Ω at ∼1.31 <italic toggle=\\\"yes\\\">μ</italic>m wavelength under CW conditions at room temperature (25 °C). Importantly, these results provide an effective strategy to achieve 1.3 <italic toggle=\\\"yes\\\">μ</italic>m wavelength band single-mode distributed feedback lasers directly on planar on-axis Si (001) substrates with high efficiency.\",\"PeriodicalId\":1,\"journal\":{\"name\":\"Accounts of Chemical Research\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":16.4000,\"publicationDate\":\"2024-03-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Accounts of Chemical Research\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1088/1612-202x/ad3439\",\"RegionNum\":1,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/1612-202x/ad3439","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
1.3 μm InAs/GaAs quantum-dot lasers grown on planar on-axis Si (001) substrates with high slope-efficiency and low differential resistance
We report electrically pumped continuous-wave (CW) InAs/GaAs quantum dot lasers monolithically grown on planar on-axis Si (001) substrates. Combining an asymmetric waveguide epitaxy structure with aluminium-free upper cladding layers and a symmetrical cathode chip structure, 1.3 μm band lasers with low differential resistance and high slope-efficiency have been achieved. Moreover, the optimized symmetrical cathode structure of the laser chips is used to improve the slope-efficiency by reducing the differential resistance and waste heat. The Fabry–Perot broad-stripe edge-emitting lasers with 2000 μm cavity length and 15 μm stripe width achieve a single-facet output power of 73 mW, a single-facet slope efficiency of 0.165 W A−1, and a differential resistance of 1.31 Ω at ∼1.31 μm wavelength under CW conditions at room temperature (25 °C). Importantly, these results provide an effective strategy to achieve 1.3 μm wavelength band single-mode distributed feedback lasers directly on planar on-axis Si (001) substrates with high efficiency.
期刊介绍:
Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance.
Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.