在平面同轴硅 (001) 衬底上生长的 1.3 μm InAs/GaAs 量子点激光器具有高斜率效率和低差分电阻

IF 16.4 1区 化学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Feng Lin, Jun Wang, Hao Zhai, Shuaicheng Liu, Qing Ge, Yanan Chen, Chuanjiang Liu, Kaize Mao, Hao Liu, Yiming Bai, Qi Wang, Yongqing Huang, Xiaomin Ren
{"title":"在平面同轴硅 (001) 衬底上生长的 1.3 μm InAs/GaAs 量子点激光器具有高斜率效率和低差分电阻","authors":"Feng Lin, Jun Wang, Hao Zhai, Shuaicheng Liu, Qing Ge, Yanan Chen, Chuanjiang Liu, Kaize Mao, Hao Liu, Yiming Bai, Qi Wang, Yongqing Huang, Xiaomin Ren","doi":"10.1088/1612-202x/ad3439","DOIUrl":null,"url":null,"abstract":"We report electrically pumped continuous-wave (CW) InAs/GaAs quantum dot lasers monolithically grown on planar on-axis Si (001) substrates. Combining an asymmetric waveguide epitaxy structure with aluminium-free upper cladding layers and a symmetrical cathode chip structure, 1.3 <italic toggle=\"yes\">μ</italic>m band lasers with low differential resistance and high slope-efficiency have been achieved. Moreover, the optimized symmetrical cathode structure of the laser chips is used to improve the slope-efficiency by reducing the differential resistance and waste heat. The Fabry–Perot broad-stripe edge-emitting lasers with 2000 <italic toggle=\"yes\">μ</italic>m cavity length and 15 <italic toggle=\"yes\">μ</italic>m stripe width achieve a single-facet output power of 73 mW, a single-facet slope efficiency of 0.165 W A<sup>−1</sup>, and a differential resistance of 1.31 Ω at ∼1.31 <italic toggle=\"yes\">μ</italic>m wavelength under CW conditions at room temperature (25 °C). Importantly, these results provide an effective strategy to achieve 1.3 <italic toggle=\"yes\">μ</italic>m wavelength band single-mode distributed feedback lasers directly on planar on-axis Si (001) substrates with high efficiency.","PeriodicalId":1,"journal":{"name":"Accounts of Chemical Research","volume":null,"pages":null},"PeriodicalIF":16.4000,"publicationDate":"2024-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"1.3 μm InAs/GaAs quantum-dot lasers grown on planar on-axis Si (001) substrates with high slope-efficiency and low differential resistance\",\"authors\":\"Feng Lin, Jun Wang, Hao Zhai, Shuaicheng Liu, Qing Ge, Yanan Chen, Chuanjiang Liu, Kaize Mao, Hao Liu, Yiming Bai, Qi Wang, Yongqing Huang, Xiaomin Ren\",\"doi\":\"10.1088/1612-202x/ad3439\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report electrically pumped continuous-wave (CW) InAs/GaAs quantum dot lasers monolithically grown on planar on-axis Si (001) substrates. Combining an asymmetric waveguide epitaxy structure with aluminium-free upper cladding layers and a symmetrical cathode chip structure, 1.3 <italic toggle=\\\"yes\\\">μ</italic>m band lasers with low differential resistance and high slope-efficiency have been achieved. Moreover, the optimized symmetrical cathode structure of the laser chips is used to improve the slope-efficiency by reducing the differential resistance and waste heat. The Fabry–Perot broad-stripe edge-emitting lasers with 2000 <italic toggle=\\\"yes\\\">μ</italic>m cavity length and 15 <italic toggle=\\\"yes\\\">μ</italic>m stripe width achieve a single-facet output power of 73 mW, a single-facet slope efficiency of 0.165 W A<sup>−1</sup>, and a differential resistance of 1.31 Ω at ∼1.31 <italic toggle=\\\"yes\\\">μ</italic>m wavelength under CW conditions at room temperature (25 °C). Importantly, these results provide an effective strategy to achieve 1.3 <italic toggle=\\\"yes\\\">μ</italic>m wavelength band single-mode distributed feedback lasers directly on planar on-axis Si (001) substrates with high efficiency.\",\"PeriodicalId\":1,\"journal\":{\"name\":\"Accounts of Chemical Research\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":16.4000,\"publicationDate\":\"2024-03-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Accounts of Chemical Research\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1088/1612-202x/ad3439\",\"RegionNum\":1,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Accounts of Chemical Research","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/1612-202x/ad3439","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

我们报告了在平面同轴硅 (001) 衬底上单片生长的电泵浦连续波 (CW) InAs/GaAs 量子点激光器。结合非对称波导外延结构、无铝上覆层和对称阴极芯片结构,实现了具有低差分电阻和高斜率效率的 1.3 μm 波段激光器。此外,经过优化的激光芯片对称阴极结构还可通过降低差分电阻和废热来提高斜率效率。法布里-珀罗宽条纹边缘发射激光器的腔长为 2000 μm,条纹宽度为 15 μm,在室温(25 °C)下的 CW 条件下,单面输出功率为 73 mW,单面斜率效率为 0.165 W A-1,在 1.31 μm 波长处的差分电阻为 1.31 Ω。重要的是,这些结果为直接在平面轴向硅(001)衬底上实现具有高效率的 1.3 μm 波长带单模分布反馈激光器提供了一种有效的策略。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
1.3 μm InAs/GaAs quantum-dot lasers grown on planar on-axis Si (001) substrates with high slope-efficiency and low differential resistance
We report electrically pumped continuous-wave (CW) InAs/GaAs quantum dot lasers monolithically grown on planar on-axis Si (001) substrates. Combining an asymmetric waveguide epitaxy structure with aluminium-free upper cladding layers and a symmetrical cathode chip structure, 1.3 μm band lasers with low differential resistance and high slope-efficiency have been achieved. Moreover, the optimized symmetrical cathode structure of the laser chips is used to improve the slope-efficiency by reducing the differential resistance and waste heat. The Fabry–Perot broad-stripe edge-emitting lasers with 2000 μm cavity length and 15 μm stripe width achieve a single-facet output power of 73 mW, a single-facet slope efficiency of 0.165 W A−1, and a differential resistance of 1.31 Ω at ∼1.31 μm wavelength under CW conditions at room temperature (25 °C). Importantly, these results provide an effective strategy to achieve 1.3 μm wavelength band single-mode distributed feedback lasers directly on planar on-axis Si (001) substrates with high efficiency.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Accounts of Chemical Research
Accounts of Chemical Research 化学-化学综合
CiteScore
31.40
自引率
1.10%
发文量
312
审稿时长
2 months
期刊介绍: Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance. Accounts of Chemical Research replaces the traditional article abstract with an article "Conspectus." These entries synopsize the research affording the reader a closer look at the content and significance of an article. Through this provision of a more detailed description of the article contents, the Conspectus enhances the article's discoverability by search engines and the exposure for the research.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信