碲化镉纳米线中的硬超导间隙

IF 3.5 2区 物理与天体物理 Q1 PHYSICS, MULTIDISCIPLINARY
Yichun Gao, Wenyu Song, Shuai Yang, Zehao Yu, Ruidong Li, Wentao Miao, Yuhao Wang, Fangting Chen, Zuhan Geng, Lining Yang, Zezhou Xia, Xiao Feng, Yunyi Zang, Lin Li, Runan Shang, Qi-Kun Xue, Ke He, Hao Zhang
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引用次数: 0

摘要

与超导体耦合的半导体纳米线为马约拉纳零模和门调谐混合量子比特等量子器件物理提供了强大的试验平台。这些量子器件的性能在很大程度上取决于诱导超导间隙的质量。硬间隙(在隧道光谱学中表现为亚间隙电导消失)既是必要的,也是人们所期望的。在 III-V 族半导体纳米线(InAs 和 InSb)中已经实现并广泛研究了硬间隙。在本研究中,我们观测到了与超导体 Pb 相耦合的 PbTe 纳米线中的硬超导间隙。间隙大小 Δ ∼ 1 meV(在一个器件中最大为 1.3 meV)。此外,还可以通过栅极调谐来创建和控制亚间隙安德烈耶夫束缚态。将器件调谐到开态可以发现亚隙电导的安德烈耶夫增强。这些成果为基于碲镉铅纳米线的多样化超导量子器件铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Hard Superconducting Gap in PbTe Nanowires
Semiconductor nanowires coupled to a superconductor provide a powerful testbed for quantum device physics such as Majorana zero modes and gate-tunable hybrid qubits. The performance of these quantum devices heavily relies on the quality of the induced superconducting gap. A hard gap, evident as vanishing subgap conductance in tunneling spectroscopy, is both necessary and desired. A hard gap has been achieved and extensively studied before in III–V semiconductor nanowires (InAs and InSb). In this study, we present the observation of a hard superconducting gap in PbTe nanowires coupled to a superconductor Pb. The gap size Δ is ∼ 1 meV (maximally 1.3 meV in one device). Additionally, subgap Andreev bound states can also be created and controlled through gate tuning. Tuning a device into the open regime can reveal Andreev enhancement of the subgap conductance. These results pave the way for diverse superconducting quantum devices based on PbTe nanowires.
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来源期刊
Chinese Physics Letters
Chinese Physics Letters 物理-物理:综合
CiteScore
5.90
自引率
8.60%
发文量
13238
审稿时长
4 months
期刊介绍: Chinese Physics Letters provides rapid publication of short reports and important research in all fields of physics and is published by the Chinese Physical Society and hosted online by IOP Publishing.
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