在不同基底上利用脉冲激光沉积和直流磁控溅射制造氮化铝薄膜的结构和光学特性

I. Virt, P. Potera, G. Wisz, Andrzej Dziedzic, B. Cieniek, I. Lopatynskyi, M. Frugynskyi
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引用次数: 0

摘要

利用脉冲激光沉积和直流磁控溅射制造了氮化铝薄膜。研究了不同技术参数和不同基底对氮化铝样品光学和结构参数的影响。对沉积在 Si3N4 衬底上的层进行了 X 射线衍射研究。此外,还对沉积在氯化钾基底上的层进行了高能电子衍射研究。还获得了沉积在石英、蓝宝石和玻璃基底上的层的透射光谱。对所获得薄膜层的光带隙进行了评估(Eg 为 3.81 至 5.81 eV),并计算出折射率(2.58)。薄膜(N1TN-AlN 样品)的相对密度为 1.26,是利用洛伦兹-洛伦兹关系计算得出的。氮化铝层显示出无定形特征,并带有多晶区域。研究表明,氮化铝薄膜的特性在很大程度上取决于所使用的方法、生长条件和基底。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structural and Optical Properties of Aluminium Nitride Thin Films Fabricated Using Pulsed Laser Deposition and DC Magnetron Sputtering on Various Substrates
Aluminium nitride thin films were fabricated using pulsed laser deposition and DC magnetron sputtering. Different technological parameters and the effects of different substrates on the optical and structural parameters of AlN samples were studied. An X-ray diffraction study was performed for the layer deposited on the Si3N4 substrate. A high-energy electron diffraction study was also carried out for the layer deposited on a KCl substrate. Transmission spectra of layers on quartz, sapphire, and glass substrates were obtained. An evaluation of the optical band gap of the obtained layers was carried out (Eg form 3.81 to 5.81 eV) and the refractive index was calculated (2.58). The relative density of the film (N1TN-AlN sample) is 1.26 and was calculated using the Lorentz-Lorentz relationship. Layers of aluminium nitride show an amorphous character with a polycrystalline region. It was shown that the properties of AlN films strongly depend on the method, growth conditions, and substrate used.
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