A. A. Abdul Razaq, F. H. Jasim, S. S. Chiad, F. A. Jasim, Z. S. A. Mosa, Y. H. Kadhim
{"title":"退火温度对溶胶-凝胶法制备的纳米结构 TiO2 薄膜物理特性的影响","authors":"A. A. Abdul Razaq, F. H. Jasim, S. S. Chiad, F. A. Jasim, Z. S. A. Mosa, Y. H. Kadhim","doi":"10.15251/jor.2024.202.131","DOIUrl":null,"url":null,"abstract":"This study uses glass substrates to create nanostructured TiO2 thin films employing SolGel method. Afterwards, TiO2 films are annealed in air for two hours at (400, 450, and 500) °C. The XRD tests demonstrate that all films are tetragonal polycrystalline and have orientations equal to those described in the literature. These findings suggest that when the annealing temperature rises, grain size increases. As the annealing temperature is raised, the Full Width at Half Maximum (FWHM) reduces from 0.57° to 0.0.51°, and the dislocation density drops from 45.22 to 39.22.18 nm, respectively. AFM has examined the thin films' surface morphology. The films formed using this method have good crystalline and homogenous surfaces, according to AFM tests. With an increase in annealing temperature, thin films' average particle size, average roughness, and Root Mean Square (RMS) value all drop. The films' optical characteristics. The transmission was over 97% decreased with increasing annealing temperatures. It is found that the band gap decreases from 3.42 to 3.3 eV with increasing annealing temperature. Between 300 and 900 nm, the films' refractive indices range from 2.89 to 2.2.76. With higher annealing temperatures, the films' extinction coefficients fall.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":"202 1","pages":""},"PeriodicalIF":1.0000,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of annealing temperature on the physical of nanostructured TiO2 films prepared by sol-gel method\",\"authors\":\"A. A. Abdul Razaq, F. H. Jasim, S. S. Chiad, F. A. Jasim, Z. S. A. Mosa, Y. H. Kadhim\",\"doi\":\"10.15251/jor.2024.202.131\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study uses glass substrates to create nanostructured TiO2 thin films employing SolGel method. Afterwards, TiO2 films are annealed in air for two hours at (400, 450, and 500) °C. The XRD tests demonstrate that all films are tetragonal polycrystalline and have orientations equal to those described in the literature. These findings suggest that when the annealing temperature rises, grain size increases. As the annealing temperature is raised, the Full Width at Half Maximum (FWHM) reduces from 0.57° to 0.0.51°, and the dislocation density drops from 45.22 to 39.22.18 nm, respectively. AFM has examined the thin films' surface morphology. The films formed using this method have good crystalline and homogenous surfaces, according to AFM tests. With an increase in annealing temperature, thin films' average particle size, average roughness, and Root Mean Square (RMS) value all drop. The films' optical characteristics. The transmission was over 97% decreased with increasing annealing temperatures. It is found that the band gap decreases from 3.42 to 3.3 eV with increasing annealing temperature. Between 300 and 900 nm, the films' refractive indices range from 2.89 to 2.2.76. With higher annealing temperatures, the films' extinction coefficients fall.\",\"PeriodicalId\":54394,\"journal\":{\"name\":\"Journal of Ovonic Research\",\"volume\":\"202 1\",\"pages\":\"\"},\"PeriodicalIF\":1.0000,\"publicationDate\":\"2024-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Ovonic Research\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.15251/jor.2024.202.131\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Ovonic Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.15251/jor.2024.202.131","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of annealing temperature on the physical of nanostructured TiO2 films prepared by sol-gel method
This study uses glass substrates to create nanostructured TiO2 thin films employing SolGel method. Afterwards, TiO2 films are annealed in air for two hours at (400, 450, and 500) °C. The XRD tests demonstrate that all films are tetragonal polycrystalline and have orientations equal to those described in the literature. These findings suggest that when the annealing temperature rises, grain size increases. As the annealing temperature is raised, the Full Width at Half Maximum (FWHM) reduces from 0.57° to 0.0.51°, and the dislocation density drops from 45.22 to 39.22.18 nm, respectively. AFM has examined the thin films' surface morphology. The films formed using this method have good crystalline and homogenous surfaces, according to AFM tests. With an increase in annealing temperature, thin films' average particle size, average roughness, and Root Mean Square (RMS) value all drop. The films' optical characteristics. The transmission was over 97% decreased with increasing annealing temperatures. It is found that the band gap decreases from 3.42 to 3.3 eV with increasing annealing temperature. Between 300 and 900 nm, the films' refractive indices range from 2.89 to 2.2.76. With higher annealing temperatures, the films' extinction coefficients fall.
期刊介绍:
Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.