用于未来柔性电子产品的不同半导体薄膜厚度 OTFT 性能分析

IF 0.9 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY
S. K. Jain, A. M. Joshi, C. Kirpalani
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引用次数: 0

摘要

本研究的目的是利用 Silvaco ATLAS TCAD 模拟器,结合缺陷密度模型,在微观层面进行深入细致的研究,从而更深入地了解有机半导体厚度对器件性能的复杂影响。本研究深入探讨了半导体厚度与空穴浓度、电动势、电场和空穴 QFL 等重要性能参数之间的关系。这项研究得出的全面见解不仅增强了对器件物理的理解,还为系统地增强电子器件提供了框架。有机薄膜晶体管 (OTFT) 将广泛应用于未来的柔性电子器件,尤其是显示和存储电路,这就要求它具有低电压、高速度和低成本的特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Performance analysis of OTFT with varying semiconductor film thickness for future flexible electronics
The goal of this study was to get a deeper understanding of the intricate impact of organic semiconductor thickness on the performance of devices, using a thorough and meticulous investigation at the microscopic level incorporating the density of defect model using using Silvaco ATLAS TCAD Simulator. The present work thoroughly investigates the relationship between the thickness of semiconductors and important performance parameters, such as hole concentration, electric potential, electric field, and Hole QFL. The comprehensive insights derived from this research not only enhance the comprehension of device physics but also provide a framework for the systematic enhancement of electronic devices. The widespread use of organic thin film transistors (OTFT) in future Flexible electronics, particularly in display and memory circuits, necessitates the incorporation of low voltage, high speed, and low cost characteristics.
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来源期刊
Journal of Optoelectronic and Biomedical Materials
Journal of Optoelectronic and Biomedical Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-
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