Computational investigation of high Curie temperature in a new N‐type ferromagnetic diluted magnetic semiconductors, especially iron‐doped on GaSb

Diluted magnetic semiconductors have become a research area in the past few years due to the importance of new technology, spintronics devices, and green technology to withstand rising global temperatures. Both n‐type and p‐type diluted magnetic semiconductors are used in pairs for perfect performance, especially for p‐n junction diodes, the p‐d Zener model, GMR, and TMR spintronics devices. The main challenge for some researchers is to find a ferromagnetic diluted magnetic semiconductor with a Curie temperature greater than room temperature for both n‐type and p‐type ferromagnetic diluted semiconductors, but this study has solved this problem. In the present study, the ferromagnetic properties of an n‐type gallium iron antimonide diluted semiconductor have been studied using the Hamiltonian model without applying an external magnetic field, electric field, or chemical potential. We have formulated a Hamiltonian model in the system, considering the application of the green formalism function and the transformation of Holstein–Primakaff. The Curie temperature, dispersion, number of magnons, reduced magnetization, and specific heat capacity of ferromagnetic magnons of the n‐type (Ga, Fe)Sb formula are formulated. The Curie temperature versus concentration graph is plotted, and the specific heat capacity and magnetization versus temperature graphs are plotted. In this study, a surprising situation is that the Curie temperature of n‐type diluted magnetic semiconductor is investigated above room temperature, which is 330.4 K. The ferromagnetic properties of appear up to 330.4 K, which is able to play a major role in spintronic and next‐generation green nanotechnology devices.