研究 VO2 薄膜的分形性质及其对金属-绝缘体相变的影响

A.A. Efremov, B.M. Romaniuk, V.P. Melnyk, O.A. Stadnik, T.M. Sabov, O.A. Kulbachinskiy, O.V. Dubikovskiy
{"title":"研究 VO2 薄膜的分形性质及其对金属-绝缘体相变的影响","authors":"A.A. Efremov, B.M. Romaniuk, V.P. Melnyk, O.A. Stadnik, T.M. Sabov, O.A. Kulbachinskiy, O.V. Dubikovskiy","doi":"10.15407/spqeo27.01.028","DOIUrl":null,"url":null,"abstract":"The mechanisms underlying the origin of fractal shape of inclusions of a new phase in VO2 films during metal-insulator phase transition are discussed. The obtained results show that hysteresis of the temperature dependence of resistance R(T) significantly depends on the film morphology and texture. Moreover, some fractal features are observed. To determine the fractal dimension D of the structural elements of the studied films from their images, different fractal analysis approaches were preliminary compared and discussed. As a result of the film image treatments, the boundaries of the structural elements were found to have fractal dimensions of 1.3 to 1.5 or higher and to correlate with the shape of R(T). The fractal boundaries indicate the dominant role of elastic stress on the phase transition of films, which is confirmed by numerical modeling. Based on these results, an analytical model is proposed that relates the free energy of a film to the fractal dimension of its constituents. Depending on the ratio of the elastic and interface specific energies, the position of the free energy minimum F corresponds to a certain fractal dimensionality D. A small interface energy leads to a higher fractal dimension making the initial phase more stable. This conclusion explains well all the effects observed experimentally in VO2. The obtained results provide a better understanding of the influence of structure and morphology on other properties of the studied films.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"37 5","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study of fractality nature in VO2 films and its influence on metal-insulator phase transition\",\"authors\":\"A.A. Efremov, B.M. Romaniuk, V.P. Melnyk, O.A. Stadnik, T.M. Sabov, O.A. Kulbachinskiy, O.V. Dubikovskiy\",\"doi\":\"10.15407/spqeo27.01.028\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The mechanisms underlying the origin of fractal shape of inclusions of a new phase in VO2 films during metal-insulator phase transition are discussed. The obtained results show that hysteresis of the temperature dependence of resistance R(T) significantly depends on the film morphology and texture. Moreover, some fractal features are observed. To determine the fractal dimension D of the structural elements of the studied films from their images, different fractal analysis approaches were preliminary compared and discussed. As a result of the film image treatments, the boundaries of the structural elements were found to have fractal dimensions of 1.3 to 1.5 or higher and to correlate with the shape of R(T). The fractal boundaries indicate the dominant role of elastic stress on the phase transition of films, which is confirmed by numerical modeling. Based on these results, an analytical model is proposed that relates the free energy of a film to the fractal dimension of its constituents. Depending on the ratio of the elastic and interface specific energies, the position of the free energy minimum F corresponds to a certain fractal dimensionality D. A small interface energy leads to a higher fractal dimension making the initial phase more stable. This conclusion explains well all the effects observed experimentally in VO2. The obtained results provide a better understanding of the influence of structure and morphology on other properties of the studied films.\",\"PeriodicalId\":21598,\"journal\":{\"name\":\"Semiconductor physics, quantum electronics and optoelectronics\",\"volume\":\"37 5\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-03-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor physics, quantum electronics and optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.15407/spqeo27.01.028\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor physics, quantum electronics and optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15407/spqeo27.01.028","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文讨论了金属-绝缘体相变过程中 VO2 薄膜中新相夹杂物分形的起源机制。研究结果表明,电阻 R(T) 的温度依赖性滞后很大程度上取决于薄膜的形态和质地。此外,还观察到一些分形特征。为了从图像中确定所研究薄膜结构元素的分形维度 D,对不同的分形分析方法进行了初步比较和讨论。通过对薄膜图像的处理,发现结构元素的边界具有 1.3 至 1.5 或更高的分形维度,并且与 R(T) 的形状相关。分形边界表明弹性应力在薄膜相变过程中起着主导作用,数值模型也证实了这一点。基于这些结果,我们提出了一个分析模型,该模型将薄膜的自由能与其成分的分形维度联系起来。根据弹性能和界面比能的比率,自由能最小值 F 的位置对应于一定的分形维度 D。这一结论很好地解释了在 VO2 实验中观察到的所有效应。所获得的结果让我们更好地理解了结构和形态对所研究薄膜其他性质的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Study of fractality nature in VO2 films and its influence on metal-insulator phase transition
The mechanisms underlying the origin of fractal shape of inclusions of a new phase in VO2 films during metal-insulator phase transition are discussed. The obtained results show that hysteresis of the temperature dependence of resistance R(T) significantly depends on the film morphology and texture. Moreover, some fractal features are observed. To determine the fractal dimension D of the structural elements of the studied films from their images, different fractal analysis approaches were preliminary compared and discussed. As a result of the film image treatments, the boundaries of the structural elements were found to have fractal dimensions of 1.3 to 1.5 or higher and to correlate with the shape of R(T). The fractal boundaries indicate the dominant role of elastic stress on the phase transition of films, which is confirmed by numerical modeling. Based on these results, an analytical model is proposed that relates the free energy of a film to the fractal dimension of its constituents. Depending on the ratio of the elastic and interface specific energies, the position of the free energy minimum F corresponds to a certain fractal dimensionality D. A small interface energy leads to a higher fractal dimension making the initial phase more stable. This conclusion explains well all the effects observed experimentally in VO2. The obtained results provide a better understanding of the influence of structure and morphology on other properties of the studied films.
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