N. Korsunska, Yu. O. Polishchuk, I. Markevich, K. Kozoriz, S. Ponomaryov, O. Melnichuk, T. Stara, L. Melnichuk, L. Khomenkova
{"title":"MgxZn1-xO 陶瓷的导电性与相组成的关系","authors":"N. Korsunska, Yu. O. Polishchuk, I. Markevich, K. Kozoriz, S. Ponomaryov, O. Melnichuk, T. Stara, L. Melnichuk, L. Khomenkova","doi":"10.15407/spqeo27.01.070","DOIUrl":null,"url":null,"abstract":"The structural and electrical characteristics of (Mg,Zn)O ceramics produced using the solid state reaction at 1100 °C for 3 hours were studied applying X-ray diffraction and IR reflection spectroscopy as well as means of direct current measurements versus MgO content in initial charge (varied from 0 to 100 mol.%). It has been shown that electrical conductivity extracted from the IR reflection spectra corresponds to that of hexagonal phase in a solid solution, while plasmon in cubic phase was not observed. The electron concentration in the hexagonal grains of solid solution prepared with MgO content below 30 mol. % in the charge was found to be close to that of ZnO grains. It shows the tendency to decrease with further growth of the MgO content, which was explained by extraction of zinc interstitials, responsible for ZnO conductivity, from ZnO under formation of the MgZnO cubic phase. The direct current measurements have shown the lower conductivity as compared to the value estimated from IR reflection spectra. This fact along with the superlinearity of current-voltage characteristics has been explained by the presence of intergranular barriers, which does not allow obtaining information on the concentration of free electrons in the grain by this method. The possible nature of intergranular barriers as well as the role of grain boundaries in the DC conductivity of samples has been discussed.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"11 6","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The dependence of electrical conductivity of MgxZn1–xO ceramics on phase composition\",\"authors\":\"N. Korsunska, Yu. O. Polishchuk, I. Markevich, K. Kozoriz, S. Ponomaryov, O. Melnichuk, T. Stara, L. Melnichuk, L. Khomenkova\",\"doi\":\"10.15407/spqeo27.01.070\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The structural and electrical characteristics of (Mg,Zn)O ceramics produced using the solid state reaction at 1100 °C for 3 hours were studied applying X-ray diffraction and IR reflection spectroscopy as well as means of direct current measurements versus MgO content in initial charge (varied from 0 to 100 mol.%). It has been shown that electrical conductivity extracted from the IR reflection spectra corresponds to that of hexagonal phase in a solid solution, while plasmon in cubic phase was not observed. The electron concentration in the hexagonal grains of solid solution prepared with MgO content below 30 mol. % in the charge was found to be close to that of ZnO grains. It shows the tendency to decrease with further growth of the MgO content, which was explained by extraction of zinc interstitials, responsible for ZnO conductivity, from ZnO under formation of the MgZnO cubic phase. The direct current measurements have shown the lower conductivity as compared to the value estimated from IR reflection spectra. This fact along with the superlinearity of current-voltage characteristics has been explained by the presence of intergranular barriers, which does not allow obtaining information on the concentration of free electrons in the grain by this method. The possible nature of intergranular barriers as well as the role of grain boundaries in the DC conductivity of samples has been discussed.\",\"PeriodicalId\":21598,\"journal\":{\"name\":\"Semiconductor physics, quantum electronics and optoelectronics\",\"volume\":\"11 6\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-03-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor physics, quantum electronics and optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.15407/spqeo27.01.070\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor physics, quantum electronics and optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15407/spqeo27.01.070","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
利用 X 射线衍射和红外反射光谱,以及直流电测量与初始电荷中氧化镁含量(0 至 100 摩尔/%)的关系,研究了在 1100 °C 下经过 3 小时固态反应生产的(Mg,Zn)O 陶瓷的结构和电气特性。结果表明,从红外反射光谱中提取的导电性与固溶体中六方相的导电性一致,而立方相中的等离子体没有被观察到。在氧化镁含量低于 30 摩尔% 的固溶体中,发现六方晶粒中的电子浓度与氧化锌晶粒中的电子浓度接近。随着氧化镁含量的进一步增加,电子浓度呈下降趋势,这是因为在氧化镁-氧化锌立方相的形成过程中,从氧化锌中提取了导致氧化锌导电性的锌间质。直流测量结果表明,与红外反射光谱估计值相比,导电率更低。这一事实以及电流-电压特性的超线性可以用晶间障的存在来解释,因为这种方法无法获得晶粒中自由电子浓度的信息。我们讨论了晶间障壁的可能性质以及晶界在样品直流导电性中的作用。
The dependence of electrical conductivity of MgxZn1–xO ceramics on phase composition
The structural and electrical characteristics of (Mg,Zn)O ceramics produced using the solid state reaction at 1100 °C for 3 hours were studied applying X-ray diffraction and IR reflection spectroscopy as well as means of direct current measurements versus MgO content in initial charge (varied from 0 to 100 mol.%). It has been shown that electrical conductivity extracted from the IR reflection spectra corresponds to that of hexagonal phase in a solid solution, while plasmon in cubic phase was not observed. The electron concentration in the hexagonal grains of solid solution prepared with MgO content below 30 mol. % in the charge was found to be close to that of ZnO grains. It shows the tendency to decrease with further growth of the MgO content, which was explained by extraction of zinc interstitials, responsible for ZnO conductivity, from ZnO under formation of the MgZnO cubic phase. The direct current measurements have shown the lower conductivity as compared to the value estimated from IR reflection spectra. This fact along with the superlinearity of current-voltage characteristics has been explained by the presence of intergranular barriers, which does not allow obtaining information on the concentration of free electrons in the grain by this method. The possible nature of intergranular barriers as well as the role of grain boundaries in the DC conductivity of samples has been discussed.