同型半胱氨酸与精神分裂症患者白质连接障碍的关系

IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Koichi Tabata, Shuraku Son, Jun Miyata, Kazuya Toriumi, Mitsuhiro Miyashita, Kazuhiro Suzuki, Masanari Itokawa, Hidehiko Takahashi, Toshiya Murai, Makoto Arai
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引用次数: 0

摘要

多项研究表明,精神分裂症(SZ)患者体内存在白质(WM)连接障碍。然而,其潜在机制仍不清楚。我们利用弥散张量成像(DTI)研究了精神分裂症患者血浆同型半胱氨酸(Hcy)水平与白质微结构之间的关系。这项回顾性观察研究共纳入了53名SZ患者和83名健康对照组(HC)。研究采用基于肽段的空间统计(TBSS)来评估WM微观结构的群体差异。在SZ组(Spearman's ρ = -.330,P = 0.016),血浆Hcy水平与WM微结构破坏之间存在明显的负相关,而在HC组(Spearman's ρ = .041,P = 0.712)则不存在这种关系。这些结果表明,Hcy的增加可能与SZ的WM连接障碍有关,Hcy与WM连接障碍之间的相互作用可能是SZ病理生理学的一个潜在机制。此外,还需要进行纵向研究,以探讨高Hcy水平是否会导致SZ患者的WM微结构紊乱。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Association of homocysteine with white matter dysconnectivity in schizophrenia

Association of homocysteine with white matter dysconnectivity in schizophrenia

Several studies have shown white matter (WM) dysconnectivity in people with schizophrenia (SZ). However, the underlying mechanism remains unclear. We investigated the relationship between plasma homocysteine (Hcy) levels and WM microstructure in people with SZ using diffusion tensor imaging (DTI). Fifty-three people with SZ and 83 healthy controls (HC) were included in this retrospective observational study. Tract-Based Spatial Statistics (TBSS) were used to evaluate group differences in WM microstructure. A significant negative correlation between plasma Hcy levels and WM microstructural disruption was noted in the SZ group (Spearman’s ρ = −.330, P = 0.016) but not in the HC group (Spearman’s ρ = .041, P = 0.712). These results suggest that increased Hcy may be associated with WM dysconnectivity in SZ, and the interaction between Hcy and WM dysconnectivity could be a potential mechanism of the pathophysiology of SZ. Further, longitudinal studies are required to investigate whether high Hcy levels subsequently cause WM microstructural disruption in people with SZ.

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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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