作为反向偏压高压砷化镓二极管中自支撑传导态机制的贡恩塌缩域

IF 0.8 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters Pub Date : 2024-03-13 DOI:10.1134/s1063785023900273

M. S. Ivanov, A. V. Rozhkov, P. B. Rodin

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引用次数: 0

摘要

摘要模拟了高压砷化镓二极管在延迟撞击电离模式下切换到导电状态的过程，并将结果与实验数据进行了比较。结果表明，开关后二极管导电状态的长期（长达 100 ns）维持效应是由于电子-空穴等离子体中出现了狭窄的（数量级为一微米）电离贡恩域，即所谓的塌缩域。强电场（约 300 kV/cm）在塌陷畴和边缘（阴极和阳极）畴中的冲击电离，使非平衡载流子（≥1017 cm-3）在施加反向极性电压脉冲的整个持续时间内保持高浓度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Collapsing Gunn Domains as a Mechanism of Self-Supporting Conducting State in Reversely Biased High-Voltage GaAs Diodes

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Collapsing Gunn Domains as a Mechanism of Self-Supporting Conducting State in Reversely Biased High-Voltage GaAs Diodes

Abstract

Switching of a high-voltage GaAs diode to the conducting state in the delayed impact-ionization mode is simulated and the results are compared with experimental data. It is shown that the effect of long-term (up to 100 ns) sustaining of the conducting state of the diode after switching is due to the appearance of narrow (of the order of a micrometer) ionizing Gunn domains, the so-called collapsing domains, in the electron-hole plasma. Impact ionization in collapsing domains and in the edge (cathode and anode) domains of a strong electric field (~300 kV/cm) maintains a high concentration of nonequilibrium carriers (≥10¹⁷ cm^–3) during the entire duration of the applied reverse polarity voltage pulse.

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来源期刊

Technical Physics Letters 物理-物理：应用

CiteScore

1.50

自引率

0.00%

发文量

审稿时长

2-4 weeks

期刊介绍： Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.