Ir 生长压力对 Ta/Pt/Co/Ir/Ta 叠层畴壁动力学的影响

P. Domenichini, J. Brock, J. Curiale, A. B. Kolton
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引用次数: 0

摘要

在超薄多层磁性薄膜中,磁畴壁对外部磁场的动态响应不仅取决于层的组成和厚度,还取决于生长条件。生长条件会引起层内和层间界面的显著结构变化,尤其会影响磁畴壁的动态、其流动性、弹性张力以及作用于它们的钉力。在这项研究中,我们特别关注了 Ta/Pt/Co/Ir/Ta 超薄多层薄膜中 Ir 层生长压力的影响。在恒定和交变磁场脉冲下,我们对一批在不同压力下生长的铱层样品进行了直流电磁特性、畴壁速度和蠕变状态下的畴形貌测量。我们发现,饱和磁化、有效各向异性常数和畴壁表面张力随着压力的增加而增长,并在阈值压力下达到饱和,而 Dzyaloshinskii-Moriya 场和无序强度在所考虑的压力范围内几乎没有变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of Ir growth pressure on the domain wall dynamics in Ta/Pt/Co/Ir/Ta stacks
The dynamical response of magnetic domain walls to external magnetic fields in ultra-thin multilayer magnetic films is determined not only by the composition and thickness of the layers but also by the growth conditions. Growth conditions can induce significant structural changes inside the layers and at the interfaces between them, affecting in particular the dynamics of domain walls, their mobility, elastic tension, and the pinning forces acting on them. In this work, we focus specifically on the effect of Ir layer growth pressure in Ta/Pt/Co/Ir/Ta ultra-thin multilayers films. Measurements of the DC magnetic properties, domain wall velocity and domain morphology in the creep regime for both constant and alternating field pulses, were performed for a batch of samples where the Ir layer was grown at different pressures. We find that the saturation magnetization, the effective anisotropy constant and the domain wall surface tension grow with increasing pressure and saturate at a threshold pressure, while the Dzyaloshinskii-Moriya field and the strength of the disorder remain practically unaltered over the range of pressures considered.
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