利用静电电位法和电位动力法对电沉积卤化镉进行二氧化碳电化学还原的比较研究

Amira Gelany, H. Mohran, Mahmoud Elrouby
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引用次数: 0

摘要

:利用三电极系统,采用静电电位法和电位动力法,在 20 摄氏度下从含有 Cd 2+ 和 S 2 O 32- 离子的酸性溶液中,在杯状改性基底上电化学合成了硫化镉(CdS)。利用 X 射线衍射分析 (XRD)、扫描电子显微镜 (SEM) 和能量色散 X 射线光谱 (EDX) 对制备的薄膜进行了表征。X 射线衍射分析表明,在我们优化的条件下,使用这两种方法沉积的 CdS 薄膜都呈现出纯净的六角形结构。通过 Mott-Schottky 测量,发现电沉积的 CdS 表现为 p 型半导体。根据这项工作中获得的数据,我们发现电沉积技术会影响电沉积材料的形态(通过扫描电镜确认)、载流子浓度、空间电荷层厚度δ SC、能隙(E g )以及对 CO 2 电还原的灵敏度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Comparative Study for the Electrodeposited Cadmium Chalcogenide by Potentiostatic and Potentiodynamic Methods for Electrochemical Reduction of CO2
: Electrochemically synthesized cadmium sulfide (CdS) on cupper-modified substrate from an acidic solution containing Cd 2+ and S 2 O 32-ions at 20 o C has been produced with potentiostatic and potentiodynamic methods utilizing a three-electrode system. The prepared films have been characterized utilizing X-ray diffraction analysis (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDX). X-ray diffraction analyses demonstrate that, under our optimized conditions, the CdS thin films deposited using both methods exhibit a pure and hexagonal structure. The electrodeposited CdS was found to behave as a p-type semiconductor, which was examined and demonstrated via the Mott-Schottky measurement. Depending upon the obtained data in this work, it was discovered that the electrodeposition techniques affect the morphology of the electrodeposited material (confirmed by SEM), carrier concentrations, thickness δ SC of the space-charge layer, the energy gap (E g ), as well as the sensitivity towards CO 2 electro-reduction.
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