调谐技术在提高基于负电容场效应的全加法器性能中的作用

Ravuri Daniel, Bode Prasad, Abhay Chaturvedi, Chinthaguntla Balaswamy, Dorababu Sudarsa, Nallathambi Vinodhkumar, Ramakrishna Reddy Eamani, Ambarapu Sudhakar, Bodapati Venkata Rajanna
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引用次数: 0

摘要

随着对更快、更坚固、更高效的设备开发的需求日益增长,从使能技术到大规模生产的工业研究,在电路设计方面都面临着尺寸、效率、功率和可扩展性等挑战。本文介绍了使用负电容场效应晶体管的低功耗高速全加法器的设计和分析。对绝热逻辑和可逆逻辑进行了全面研究。研究了使用金属氧化物场效应晶体管(MOSFET)和负电容场效应晶体管(NCFET)的全加法器的性能。与传统的 MOSFET 相比,基于 NCFET 的全加法器具有低功耗和高速度的特点。整个设计和分析都是通过 cadence virtuoso 软件完成的。绝热逻辑提供 0.023 ns 的低延迟,可逆逻辑提供 7.19 mw 的低功耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Role of tuning techniques in advancing the performance of negative capacitance field effecting based full adder
The increasing demand for faster, robust, and efficient device development of enabling technology to mass production of industrial research in circuit design deals with challenges like size, efficiency, power, and scalability. This paper, presents a design and analysis of low power high speed full adder using negative capacitance field effecting transistors. A comprehensive study is performed with adiabatic logic and reversable logic. The performance of full adder is studied with metal oxide field effect transistor (MOSFET) and negative capacitance field effecting (NCFET). The NCFET based full adder offers a low power and high speed compared with conventional MOSFET. The complete design and analysis are performed using cadence virtuoso. The adiabatic logic offering low delay of 0.023 ns and reversable logic is offering low power of 7.19 mw.
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