外延单层氮化硼中的空间分辨紫外-C 发射

IF 4.5 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

2D Materials Pub Date : 2024-03-02 DOI:10.1088/2053-1583/ad2f45

Adrien Rousseau, Juliette Plo, P. Valvin, Tin S. Cheng, J. Bradford, T. James, James Wrigley, Christopher J. Mellor, P. Beton, Sergei V. Novikov, V. Jacques, Bernard Gil, Guillaume Cassabois

{"title":"外延单层氮化硼中的空间分辨紫外-C 发射","authors":"Adrien Rousseau, Juliette Plo, P. Valvin, Tin S. Cheng, J. Bradford, T. James, James Wrigley, Christopher J. Mellor, P. Beton, Sergei V. Novikov, V. Jacques, Bernard Gil, Guillaume Cassabois","doi":"10.1088/2053-1583/ad2f45","DOIUrl":null,"url":null,"abstract":"\n We report hyperspectral imaging in the UV-C spectral domain in epitaxial monolayers of hexagonal boron nitride (hBN). Under quasi-resonant laser excitation, the UV-C emission of monolayer hBN consists in resonant Raman scattering and photoluminescence, which appear to be spatially uncorrelated. Systematic measurements as a function of the excitation energy bring evidence of a photoluminescence singlet at ~6.045 eV. The spatial variations of the photoluminescence energy are found to be around ~10 meV, revealing that the inhomogeneous broadening is lower than the average photoluminescence linewidth of ~25 meV, a value close to the radiative limit in monolayer hBN. Our methodology provides an accurate framework for assessing the opto-electronic properties of hBN in the prospect of scalable hBN-based devices fabricated by epitaxy.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":null,"pages":null},"PeriodicalIF":4.5000,"publicationDate":"2024-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Spatially-resolved UV-C emission in epitaxial monolayer boron nitride\",\"authors\":\"Adrien Rousseau, Juliette Plo, P. Valvin, Tin S. Cheng, J. Bradford, T. James, James Wrigley, Christopher J. Mellor, P. Beton, Sergei V. Novikov, V. Jacques, Bernard Gil, Guillaume Cassabois\",\"doi\":\"10.1088/2053-1583/ad2f45\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n We report hyperspectral imaging in the UV-C spectral domain in epitaxial monolayers of hexagonal boron nitride (hBN). Under quasi-resonant laser excitation, the UV-C emission of monolayer hBN consists in resonant Raman scattering and photoluminescence, which appear to be spatially uncorrelated. Systematic measurements as a function of the excitation energy bring evidence of a photoluminescence singlet at ~6.045 eV. The spatial variations of the photoluminescence energy are found to be around ~10 meV, revealing that the inhomogeneous broadening is lower than the average photoluminescence linewidth of ~25 meV, a value close to the radiative limit in monolayer hBN. Our methodology provides an accurate framework for assessing the opto-electronic properties of hBN in the prospect of scalable hBN-based devices fabricated by epitaxy.\",\"PeriodicalId\":6812,\"journal\":{\"name\":\"2D Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.5000,\"publicationDate\":\"2024-03-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2D Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1088/2053-1583/ad2f45\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2D Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/2053-1583/ad2f45","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

我们报告了六方氮化硼（hBN）外延单层 UV-C 光谱域的高光谱成像。在准共振激光激发下，单层氮化硼的 UV-C 发射由共振拉曼散射和光致发光组成，两者似乎在空间上不相关。根据激发能量的函数进行的系统测量证明，在 ~6.045 eV 处存在光致发光单线。光致发光能量的空间变化约为 ~10 meV，这表明不均匀展宽低于 ~25 meV 的平均光致发光线宽，该值接近单层 hBN 的辐射极限。我们的方法提供了一个准确的框架，可用于评估 hBN 的光电特性，从而有望通过外延方法制造出基于 hBN 的可扩展器件。

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Spatially-resolved UV-C emission in epitaxial monolayer boron nitride

We report hyperspectral imaging in the UV-C spectral domain in epitaxial monolayers of hexagonal boron nitride (hBN). Under quasi-resonant laser excitation, the UV-C emission of monolayer hBN consists in resonant Raman scattering and photoluminescence, which appear to be spatially uncorrelated. Systematic measurements as a function of the excitation energy bring evidence of a photoluminescence singlet at ~6.045 eV. The spatial variations of the photoluminescence energy are found to be around ~10 meV, revealing that the inhomogeneous broadening is lower than the average photoluminescence linewidth of ~25 meV, a value close to the radiative limit in monolayer hBN. Our methodology provides an accurate framework for assessing the opto-electronic properties of hBN in the prospect of scalable hBN-based devices fabricated by epitaxy.

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来源期刊

2D Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-

CiteScore

10.70

自引率

5.50%

发文量

138

审稿时长

1.5 months

期刊介绍： 2D Materials is a multidisciplinary, electronic-only journal devoted to publishing fundamental and applied research of the highest quality and impact covering all aspects of graphene and related two-dimensional materials.