{"title":"用于开发近红外光电探测器的基于 InGaAs 的半导体异外延结构光谱学","authors":"A. M. Kosyakova, V. S. Kovshov, M. O. Mozhaeva","doi":"10.1134/s1064226923140103","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>Studies and analysis of samples with heteroepitaxial structure based on a InGaAs solid solution grown by molecular beam epitaxy on a GaAs substrate are presented. The composition and thickness of the layers of the structure were determined by photoluminescent spectroscopy at room temperature and scanning electron microscopy, respectively. Transmission spectra were measured on an IR Fourier spectrometer. An analytical model of the spectral characteristics of the studied structures has been developed. By solving the inverse problem, the structural parameters of the structure and the composition of the InGaAs active layer were determined by the fitting method. A comparative analysis of experimental and theoretical data showed a small spread of values for the thickness (less than 65 nm) and the composition of the absorbing layer (less than 0.04). The correctness and speed of the developed method of characterization of semiconductor structures without plate destruction is shown.</p>","PeriodicalId":50229,"journal":{"name":"Journal of Communications Technology and Electronics","volume":null,"pages":null},"PeriodicalIF":0.4000,"publicationDate":"2024-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Spectroscopy of Semiconductor Heteroepitaxial Structures Based on InGaAs for the Development of NIR Photodetectors\",\"authors\":\"A. M. Kosyakova, V. S. Kovshov, M. O. Mozhaeva\",\"doi\":\"10.1134/s1064226923140103\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>Studies and analysis of samples with heteroepitaxial structure based on a InGaAs solid solution grown by molecular beam epitaxy on a GaAs substrate are presented. The composition and thickness of the layers of the structure were determined by photoluminescent spectroscopy at room temperature and scanning electron microscopy, respectively. Transmission spectra were measured on an IR Fourier spectrometer. An analytical model of the spectral characteristics of the studied structures has been developed. By solving the inverse problem, the structural parameters of the structure and the composition of the InGaAs active layer were determined by the fitting method. A comparative analysis of experimental and theoretical data showed a small spread of values for the thickness (less than 65 nm) and the composition of the absorbing layer (less than 0.04). The correctness and speed of the developed method of characterization of semiconductor structures without plate destruction is shown.</p>\",\"PeriodicalId\":50229,\"journal\":{\"name\":\"Journal of Communications Technology and Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.4000,\"publicationDate\":\"2024-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Communications Technology and Electronics\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://doi.org/10.1134/s1064226923140103\",\"RegionNum\":4,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Communications Technology and Electronics","FirstCategoryId":"94","ListUrlMain":"https://doi.org/10.1134/s1064226923140103","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Spectroscopy of Semiconductor Heteroepitaxial Structures Based on InGaAs for the Development of NIR Photodetectors
Abstract
Studies and analysis of samples with heteroepitaxial structure based on a InGaAs solid solution grown by molecular beam epitaxy on a GaAs substrate are presented. The composition and thickness of the layers of the structure were determined by photoluminescent spectroscopy at room temperature and scanning electron microscopy, respectively. Transmission spectra were measured on an IR Fourier spectrometer. An analytical model of the spectral characteristics of the studied structures has been developed. By solving the inverse problem, the structural parameters of the structure and the composition of the InGaAs active layer were determined by the fitting method. A comparative analysis of experimental and theoretical data showed a small spread of values for the thickness (less than 65 nm) and the composition of the absorbing layer (less than 0.04). The correctness and speed of the developed method of characterization of semiconductor structures without plate destruction is shown.
期刊介绍：
Journal of Communications Technology and Electronics is a journal that publishes articles on a broad spectrum of theoretical, fundamental, and applied issues of radio engineering, communication, and electron physics. It publishes original articles from the leading scientific and research centers. The journal covers all essential branches of electromagnetics, wave propagation theory, signal processing, transmission lines, telecommunications, physics of semiconductors, and physical processes in electron devices, as well as applications in biology, medicine, microelectronics, nanoelectronics, electron and ion emission, etc.
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