石墨烯/h-BN 摩尔超晶格器件中的克莱因隧道衰减和增强的法布里-佩罗干涉

IF 4.5 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Viet-Anh Tran, Viet-Hung Nguyen, Jean-Christophe Charlier
{"title":"石墨烯/h-BN 摩尔超晶格器件中的克莱因隧道衰减和增强的法布里-佩罗干涉","authors":"Viet-Anh Tran, Viet-Hung Nguyen, Jean-Christophe Charlier","doi":"10.1088/2053-1583/ad27e8","DOIUrl":null,"url":null,"abstract":"Hexagonal boron-nitride (<italic toggle=\"yes\">h</italic>-BN) provides an ideal substrate for supporting graphene devices to achieve fascinating transport properties, such as Klein tunneling, electron optics and other novel quantum transport phenomena. However, depositing graphene on <italic toggle=\"yes\">h</italic>-BN creates moiré superlattices, whose electronic properties can be significantly manipulated by controlling the lattice alignment between layers. In this work, the effects of these moiré structures on the transport properties of graphene are investigated using atomistic simulations. At large misalignment angles (leading to small moiré cells), the transport properties (most remarkably, Klein tunneling) of pristine graphene devices are conserved. On the other hand, in the nearly aligned cases, the moiré interaction induces stronger effects, significantly affecting electron transport in graphene. In particular, Klein tunneling is significantly degraded. In contrast, strong Fabry-Pérot interference (accordingly, strong quantum confinement) effects and non-linear I-V characteristics are observed. P-N interface smoothness engineering is also considered, suggesting as a potential way to improve these transport features in graphene/<italic toggle=\"yes\">h</italic>-BN devices.","PeriodicalId":6812,"journal":{"name":"2D Materials","volume":null,"pages":null},"PeriodicalIF":4.5000,"publicationDate":"2024-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Klein tunneling degradation and enhanced Fabry-Pérot interference in graphene/h-BN moiré-superlattice devices\",\"authors\":\"Viet-Anh Tran, Viet-Hung Nguyen, Jean-Christophe Charlier\",\"doi\":\"10.1088/2053-1583/ad27e8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hexagonal boron-nitride (<italic toggle=\\\"yes\\\">h</italic>-BN) provides an ideal substrate for supporting graphene devices to achieve fascinating transport properties, such as Klein tunneling, electron optics and other novel quantum transport phenomena. However, depositing graphene on <italic toggle=\\\"yes\\\">h</italic>-BN creates moiré superlattices, whose electronic properties can be significantly manipulated by controlling the lattice alignment between layers. In this work, the effects of these moiré structures on the transport properties of graphene are investigated using atomistic simulations. At large misalignment angles (leading to small moiré cells), the transport properties (most remarkably, Klein tunneling) of pristine graphene devices are conserved. On the other hand, in the nearly aligned cases, the moiré interaction induces stronger effects, significantly affecting electron transport in graphene. In particular, Klein tunneling is significantly degraded. In contrast, strong Fabry-Pérot interference (accordingly, strong quantum confinement) effects and non-linear I-V characteristics are observed. P-N interface smoothness engineering is also considered, suggesting as a potential way to improve these transport features in graphene/<italic toggle=\\\"yes\\\">h</italic>-BN devices.\",\"PeriodicalId\":6812,\"journal\":{\"name\":\"2D Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.5000,\"publicationDate\":\"2024-02-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2D Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1088/2053-1583/ad27e8\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2D Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1088/2053-1583/ad27e8","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

六方氮化硼(h-BN)是支持石墨烯器件的理想基底,可实现迷人的传输特性,如克莱因隧道、电子光学和其他新型量子传输现象。然而,在 h-BN 上沉积石墨烯会产生摩尔超晶格,通过控制各层之间的晶格排列,可以极大地操纵其电子特性。在这项工作中,我们利用原子模拟研究了这些摩尔纹结构对石墨烯传输特性的影响。在较大的错位角(导致较小的摩尔纹单元)下,原始石墨烯器件的传输特性(最显著的是克莱因隧道效应)保持不变。另一方面,在几乎对齐的情况下,摩尔纹相互作用会产生更强的效应,从而显著影响石墨烯中的电子传输。尤其是克莱因隧道效应会明显降低。与此相反,观察到了强烈的法布里-佩罗干涉(相应地,强量子约束)效应和非线性 I-V 特性。此外,还考虑了 P-N 接口光滑度工程,认为这是改善石墨烯/h-BN 器件中这些传输特性的潜在方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Klein tunneling degradation and enhanced Fabry-Pérot interference in graphene/h-BN moiré-superlattice devices
Hexagonal boron-nitride (h-BN) provides an ideal substrate for supporting graphene devices to achieve fascinating transport properties, such as Klein tunneling, electron optics and other novel quantum transport phenomena. However, depositing graphene on h-BN creates moiré superlattices, whose electronic properties can be significantly manipulated by controlling the lattice alignment between layers. In this work, the effects of these moiré structures on the transport properties of graphene are investigated using atomistic simulations. At large misalignment angles (leading to small moiré cells), the transport properties (most remarkably, Klein tunneling) of pristine graphene devices are conserved. On the other hand, in the nearly aligned cases, the moiré interaction induces stronger effects, significantly affecting electron transport in graphene. In particular, Klein tunneling is significantly degraded. In contrast, strong Fabry-Pérot interference (accordingly, strong quantum confinement) effects and non-linear I-V characteristics are observed. P-N interface smoothness engineering is also considered, suggesting as a potential way to improve these transport features in graphene/h-BN devices.
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来源期刊
2D Materials
2D Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
10.70
自引率
5.50%
发文量
138
审稿时长
1.5 months
期刊介绍: 2D Materials is a multidisciplinary, electronic-only journal devoted to publishing fundamental and applied research of the highest quality and impact covering all aspects of graphene and related two-dimensional materials.
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