Implemention of Self-Propagating Low-Temperature Synthesis to Produce Pure Silicon Carbide

Results of research into formation of ultrapure silicon carbide by self propagating synthesis are described. This synthesis provides a reduction in process time and energy costs. It is established that the main structural transition is caused by phase transformations and polymorphism phenomenon within silica (α-SiO₂ to β-SiO₂ transition) which is necessary to produce pure silicon carbide. It is determined that in a given time interval under the influence of imposed conditions and subsequent interaction with silicic acid and active carbon spontaneous transition begins with formation of ultrapure silicon carbide. Implementation of the proposed technology increases silicon carbide yield to 95 – 99% with a nanoscale product (40 – 60 nm) of 99.99% purity.