V. O. Smilyk, S. S. Fomanyuk, I. A. Rusetskyi, M. O. Danilov, G. Ya. Kolbasov
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Comparative photoelectrochemical characteristics of heterostructure and composite based on BiVO4 and WO3
Films of heterostructure BiVO4/WO3, composite BiVO4 with WO3 and pure BiVO4 were obtained by electrochemical deposition. Analysis of photoelectrochemical characteristics of such films showed that observed increase in photocurrent quantum yield and decrease in overvoltage of oxygen evolution on the photoanode in row from pure BiVO4 films, than in heterostructure BiVO4/WO3, after that—composite BiVO4–WO3. The reason of such positive effect of reducing the energy losses associated with the surface recombination of electrons and holes and reduction of losses at the stage of interfacial charge transfer in the BiVO4–WO3 composite compared with the heterostructure BiVO4/WO3 and pure BiVO4.
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