封底图片

IF 22.7 1区材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY

Infomat Pub Date : 2024-02-25 DOI:10.1002/inf2.12532

Seungho Song, Changsoon Choi, Jongtae Ahn, Je-Jun Lee, Jisu Jang, Byoung-Soo Yu, Jung Pyo Hong, Yong-Sang Ryu, Yong-Hoon Kim, Do Kyung Hwang

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引用次数: 0

摘要

通过单个双向极化集成二维铁电场效应晶体管，展示了双逻辑内存器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A dual-logic-in-memory device is demonstrated through a single bidirectional polarization-integrated 2D ferroelectric field-effect transistor.

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来源期刊

Infomat MATERIALS SCIENCE, MULTIDISCIPLINARY-

CiteScore

37.70

自引率

3.10%

发文量

111

审稿时长

8 weeks

期刊介绍： InfoMat, an interdisciplinary and open-access journal, caters to the growing scientific interest in novel materials with unique electrical, optical, and magnetic properties, focusing on their applications in the rapid advancement of information technology. The journal serves as a high-quality platform for researchers across diverse scientific areas to share their findings, critical opinions, and foster collaboration between the materials science and information technology communities.