通过 γ 射线辐照评估闪存的耐辐射性

Kenichiro Takakura, Kensuke Matsumoto, Kousei Tateishi, Masashi Yoneoka, Isao Tsunoda, Shigekazu Suzuki, Shinji Kawatsuma
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引用次数: 0

摘要

我们对开发退役机器人所需的微控制器(Raspberry Pi)的辐射耐受性进行了研究。我们发现,启动微控制器所需的闪存具有特别低的辐射耐受性,大大缩短了微控制器在辐射环境中的运行时间。我们还发现,某些高性能闪存具有很高的辐射耐受性。对闪存失效过程的调查显示,由于辐照,内部存储器信息被改写,导致存储器寿命有限。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Assessment of Radiation Tolerance of Flash Memory by γ-Ray Irradiation
The radiation tolerance of a microcontroller (Raspberry Pi) required for the development of decommissioning robots was investigated. We found that the flash memory needed to boot the microcontroller had particularly low-radiation tolerance, significantly reducing the operation duration of the microcontroller in a radiation environment. We also found that certain high-performance flash memories have high radiation tolerance. Investigation of the process by which flash memory becomes inoperable revealed that internal memory information is rewritten owing to irradiation, leading to limited lifetime for memory.
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